Etchant for metal
An etchant for a metal is described. In one example, the etchant includes ammonium persulfate ((NH 4 ) 2 S 2 O 8 ), an azole compound and water. The etchant does not include hydrogen peroxide. Thus, the etchant may etch a metal layer including copper so that an etched copper layer has a tapered profile. Furthermore, the etchant may have a high stability to maintain etching ability for a longer time. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.
1 . An etchant for a metal, comprising:
about 0.1% to about 50% by weight of ammonium persulfate;
about 0.01% to about 5% by weight of an azole compound; and
water.
2 . The etchant of claim 1 , wherein the azole compound comprises at least one selected from the group consisting of benzotriazole, aminotetrazole, imidazole and pyrazole.
3 . The etchant of claim 1 , further comprising a fluoride compound containing fluorine.
4 . The etchant of claim 3 , wherein the content of the fluoride compound is about 0.01% to about 10% by weight.
5 . The etchant of claim 4 , wherein the fluoride compound comprises at least one selected from the group consisting of hydrofluoric acid, ammonium fluoride, ammonium bifluoride, potassium fluoride and sodium fluoride.
6 . The etchant of claim 3 , further comprising at least one selected from the group consisting of no more than about 10% by weight of a nitrate compound, no more than about 10% by weight of a sulfate compound, no more than about 10% by weight of a phosphate compound and no more than about 10% by weight of an acetate compound, the nitrate compound including nitric acid and/or a nitrate, the sulfate compound including sulfuric acid and/or a sulfate, the phosphate compound including phosphoric acid and/or a phosphate, and the acetate compound including acetic acid and/or an acetate.
7 . The etchant of claim 6 , wherein the nitrate compound comprises at least one selected from the group consisting of nitric acid, iron nitrate(III) (Fe(NO 3 ) 3 ), potassium nitrate, ammonium nitrate and lithium nitrate.
8 . The etchant of claim 6 , wherein the sulfate compound comprises at least one selected from the group consisting of sulfuric acid, ammonium hydrogen sulfate (NH 4 HSO 4 ), potassium hydrogen sulfate (KHSO 4 ) and dipotassium sulfate (K 2 SO 4 ).
9 . The etchant of claim 6 , wherein the phosphate compound comprises at least one selected from the group consisting of phosphoric acid, triammonium phosphate ((NH 4 ) 3 PO 4 ), diammonium hydrogen phosphate ((NH 4 ) 2 HPO 4 ), ammonium dihydrogen phosphate (NH 4 H 2 PO 4 ), tripotassium phosphate (K 3 PO 4 ), dipotassium hydrogen phosphate (K 2 HPO 4 ), potassium dihydrogen phosphate (KH 2 PO 4 ), trisodium phosphate (Na 3 PO 4 ), disodium hydrogen phosphate (Na 2 HPO 4 ) and sodium dihydrogen phosphate (NaH 2 PO 4 )
10 . The etchant of claim 6 , wherein the acetate compound comprises at least one selected from the group consisting of acetic acid, ammonium acetate, potassium acetate, sodium acetate and iminodiacetic acid (HN(CH 2 COOH) 2 , IDA)
11 . The etchant of claim 5 , further comprising a sulfonate compound including sulfonic acid.
12 . The etchant of claim 11 , wherein the content of the sulfonate compound is about 0.001% to about 10% by weight.
13 . The etchant of claim 12 , wherein the sulfonate compound comprises at least one selected from the group consisting of benzenesulfonic acid, para-toluenesulfonic acid, methanesulfonic acid and amidosulfonic acid.
14 . The etchant of claim 11 , further comprising a chelating agent.
15 . The etchant of claim 14 , wherein the content of the chelating agent is about 0.0001% to about 5% by weight.
16 . The etchant of claim 15 , wherein the chelating agent comprises at least one selected from the group consisting of a phosphonic chelating compound, a sulfonic chelating compound and an acetate chelating compound.
17 . An etchant for a metal, comprising:
about 0.1% to about 50% by weight of ammonium persulfate;
about 0.01% to about 5% by weight of an azole compound;
water; and
no hydrogen peroxide.