Thin film transistor and organic light-emitting display device having the thin film transistor
Disclosed is a thin film transistor including a P-type semiconductor layer, and an organic light-emitting display device having the thin film transistor. The present invention provides a thin film transistor including a substrate, a semiconductor layer, and a gate electrode and a source/drain electrode formed on the substrate, wherein the semiconductor layer is composed of P-type ZnO:N layers through a reaction of a mono-nitrogen gas with a zinc precursor, and the ZnO:N layer includes an un-reacted impurity element at a content of 3 at % or less.
1 . A thin film transistor comprising:
a substrate;
a semiconductor layer arranged on the substrate, the semiconductor layer including a P-type ZnO:N layer through a reaction of a mono-nitrogen gas with a zinc precursor, the ZnO:N layer including an un-reacted impurity element at a content of 3 at % or less;
a gate electrode arranged on the substrate; and
a source electrode and a drain electrode, each of which is arranged on the substrate for contacting a portion of the semiconductor layer.
2 . The thin film transistor according to claim 1 , wherein the zinc precursor includes an organic compound precursor including carbon compounds, and is selected from the group consisting of DEZ (Diethyl-Zinc), DMZ (Dimethyl-Zinc) and EMZ (Ethyl-Methyl-Zinc).
3 . The thin film transistor according to claim 2 , wherein the un-reacted impurity element includes carbon.
4 . The thin film transistor according to claim 1 , wherein the zinc precursor includes an inorganic precursor including halide compound, and is selected from the group consisting of ZnCl 2 , ZnBr 2 and ZnF 2 .
5 . The thin film transistor according to claim 4 , wherein the un-reacted impurity element includes halide.
6 . The thin film transistor according to claim 1 , wherein the semiconductor layer further includes an oxygen source.
7 . A method for manufacturing a thin film transistor using an atomic layer deposition method, the method comprising:
loading a substrate inside a chamber;
injecting a zinc precursor inside the chamber to have the zinc precursor being chemically absorbed into the substrate;
primarily purging the chamber;
injecting a mono-nitrogen reaction gas inside the chamber; and
secondarily purging the chamber.
8 . The method according to claim 7 , further comprising a step of supplying an oxygen source inside the chamber.
9 . The method according to claim 8 , wherein the oxygen source is selected from the group consisting of H 2 O steam, O 2 gas, and O 3 .
10 . The method according to claim 7 , wherein the zinc precursor includes an organic compound precursor, and is selected from the group consisting of DEZ (Diethyl-Zinc), DMZ (Dimethyl-Zinc), and EMZ (Ethyl-Methyl-Zinc).
11 . The method according to claim 7 , wherein the zinc precursor includes an inorganic precursor including halide compound, and is selected from the group consisting of ZnCl 2 , ZnBr 2 , and ZnF 2 .
12 . The method according to claim 7 , wherein the mono-nitrogen reaction gas is selected from the group consisting of NO 2 , NH 3 , NO, NF 3 , NCL 3 , NI 3 , and NBr 3 .
13 . A method for manufacturing a thin film transistor using a plasma chemical vapor deposition method, the method comprising:
loading a substrate inside a chamber; and
supplying a zinc precursor gas and a mono-nitrogen reaction gas onto the substrate to form a P-type ZnO:N semiconductor layer on the substrate through the plasma reaction.
14 . The method according to claim 13 , further comprising a step of supplying an oxygen source inside the chamber.
15 . The method according to claim 14 , wherein the oxygen source is selected from the group consisting of H 2 O steam, O 2 gas, and O 3 .
16 . The method according to claim 13 , wherein the zinc precursor gas includes an organic compound precursor, and is selected from the group consisting of DEZ (Diethyl-Zinc), DMZ (Dimethyl-Zinc), and EMZ (Ethyl-Methyl-Zinc).
17 . The method according to claim 13 , wherein the zinc precursor gas includes an inorganic precursor including halide compound, and is selected from the group consisting of ZnCl 2 , ZnBr 2 , and ZnF 2 .
18 . The method according to claim 13 , wherein the nitrogen reaction gas is selected from the group consisting of NO 2 , NH 3 , NO, NF 3 , NCL 3 , NI 3 , and NBr 3 .
19 . An organic light-emitting display device, comprising:
a substrate,
a thin film transistor comprising:
a semiconductor layer arranged on the substrate, the semiconductor layer including a P type ZnO:N layer through a reaction of a mono nitrogen gas with a zinc precursor, the ZnO:N layer including an un-reacted impurity element at a content of 3 at % or less;
a gate electrode arranged on the substrate; and
a source electrode and a drain electrode, each of which is arranged on the substrate for contacting a portion of the semiconductor layer; and
an organic light emitting diode formed on the thin film transistor, the organic light emitting diode being driven by the thin film transistor and producing light.