Solid-state imaging element
View Patent ↗There is provided a solid-state imaging element having a light receiving part generating charges by light irradiation, and a source/drain region of a transistor, both formed in a semiconductor layer. The solid-state imaging element includes a non-silicided region including the light receiving part, in which surfaces of the source/drain region and a gate electrode of the transistor are not silicided; and a silicided region in which the surfaces of the source/drain region and the gate electrode of the transistor are silicided. The non-silicided region has a sidewall formed on a side surface of the gate electrode of the transistor, a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall, and a salicide block film formed on the hydrogen supply film to prevent silicidation. The silicided region has a sidewall formed on the side surface of the gate electrode of the transistor.
1. A solid-state imaging element including a semiconductor layer having a light receiving part generating charges by light irradiation, the solid-state imaging element comprising:
a non-silicided region including the light receiving part, in which surfaces of a source/drain region and a gate electrode of a non-silicided transistor are not silicided; and
a silicided region in which the surfaces of a source/drain region and a gate electrode of a silicided transistor are silicided, wherein
the non-silicided region having:
a sidewall formed on a side surface of the gate electrode of the non-silicided transistor;
a hydrogen supply film formed to cover the semiconductor layer, the gate electrode, and the sidewall of the non-silicided transistor; and
a salicide block film formed on the hydrogen supply film to prevent silicidation of the non-silicided transistor, and
the silicided region having:
a sidewall formed on a side surface of the gate electrode of the silicided transistor without the salicide block film covering the semiconductor layer, the gate electrode, and the sidewall of the silicided transistor,
wherein the sidewall in the silicided transistor has a structure identical to the sidewall in the non-silicided transistor,
wherein the sidewall in the non-silicided transistor and silicided transistor is formed of a silicon oxide film and a silicon nitride film,
wherein the silicon oxide film is an HTO (High Temperature Oxide) film and the silicon nitride film is an SiN film formed by low pressure CVD.
2. A solid-state imaging element according to claim 1 , wherein said hydrogen supply film is a UV-SiN film.
3. A solid-state imaging element according to claim 1 , wherein said salicide block film is a silicon oxide layer.
4. A solid-state imaging element according to claim 1 , wherein said salicide block film is a silicon nitride layer.
5. A solid-state imaging element according to claim 4 , wherein said silicon nitride layer is an LP-SiN layer.