Organic semiconductor device
Provided is an organic tunneling p-n junction diode. The organic tunneling p-n junction diode includes an n-doped organic semiconductor layer and a p-doped organic semiconductor layer which are doped with extrinsic impurities. When either a reverse-bias voltage or a forward-bias voltage is applied, the organic tunneling p-n junction diode is turned off within a predetermined voltage range and has exponential voltage-current characteristics outside the predetermined voltage range.
1 . An organic semiconductor device comprising:
a p-doped organic semiconductor layer that is doped with first impurities; and
an n-doped organic semiconductor layer that is doped with second impurities.
2 . The organic semiconductor device of claim 1 , wherein the p-doped organic semiconductor layer and the n-doped organic semiconductor layer form a p-n junction.
3 . The organic semiconductor device of claim 1 , wherein each of the first impurities and the second impurities are doped at a density of 0.1 to 80%.
4 . The organic semiconductor device of claim 1 , wherein the p-doped organic semiconductor layer comprises any one selected from the group consisting of an oxadiazole compound having an amino substituent, a triphenylmethane compound having an amino substituent, a triphenyl compound having an amino substituent, a tertiary compound, a hydazone compound, a pyrazoline compound, an enamine compound, a styryl compound, a stilbene compound, and a carbazole compound.
5 . The organic semiconductor device of claim 1 , wherein the n-doped organic semiconductor layer comprises any one selected from the group consisting of an anthracene compound, a phenanthracene compound, a pyrene compound, a perylene compound, a chrysene compound, a triphenylene compound, a fluoranthene compound, a periflanthene compound, a azole compound, a diazole compound, and a vinylene compound.
6 . The organic semiconductor device of claim 3 , wherein the p-doped organic semiconductor layer comprises any one selected from the group consisting of an oxadiazole compound having an amino substituent, a triphenylmethane compound having an amino substituent, a triphenyl compound having an amino substituent, a tertiary compound, a hydazone compound, a pyrazoline compound, an enamine compound, a styryl compound, a stilbene compound, and a carbazole compound.
7 . The organic semiconductor device of claim 3 , wherein the n-doped organic semiconductor layer comprises any one selected from the group consisting of an anthracene compound, a phenanthracene compound, a pyrene compound, a perylene compound, a chrysene compound, a triphenylene compound, a fluoranthene compound, a periflanthene compound, an azole compound, a diazole compound, and a vinylene compound.
8 . The organic semiconductor device of claim 4 , wherein the first impurities comprise at least one selected from the group consisting of F 4 -TCNQ, V 2 O 5 , WO 3 , CrO 3 , WO 3 , SnO 2 , ZnO, MnO 2 , CoO 2 , and TiO 2 .
9 . The organic semiconductor device of claim 4 , wherein the second impurities comprise at least one selected from the group consisting of W 2 (hpp) 4 , Mo 2 (hpp) 4 , Cr 2 (hpp) 4 , Cs, Li, Fr, Rb, K, Cs 2 CO 3 , CaCO 3 , K 2 CO 3 , Ag 2 CO 3 , and Li 2 CO 3 .
10 . The organic semiconductor device of claim 5 , wherein the first impurities comprise at least one selected from the group consisting of F 4 -TCNQ, V 2 O 5 , WO 3 , CrO 3 , WO 3 , SnO 2 , ZnO, MnO 2 , CoO 2 , and TiO 2 .
11 . The organic semiconductor device of claim 5 , wherein the second impurities comprise at least one selected from the group consisting of W 2 (hpp) 4 , Mo 2 (hpp) 4 , Cr 2 (hpp) 4 , Cs, Li, Fr, Rb, K, Cs 2 CO 3 , CaCO 3 , K 2 CO 3 , Ag 2 CO 3 , Na 2 CO 3 , and Li 2 CO 3 .
12 . The organic semiconductor device of claim 1 , wherein highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels of the n-doped organic semiconductor layer are respectively higher than HOMO and LUMO energy levels of the p-doped organic semiconductor layer.
13 . The organic semiconductor device of claim 2 , wherein highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels of the n-doped organic semiconductor layer are respectively higher than HOMO and LUMO energy levels of the p-doped organic semiconductor layer.
14 . The organic semiconductor device of claim 3 , wherein highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels of the n-doped organic semiconductor layer are respectively higher than HOMO and LUMO energy levels of the p-doped organic semiconductor layer.