Electrostatic discharge protection device with phosphors and method of fabricating the same

1. An electrostatic discharge protection device, comprising:

an electrostatic discharge part configured for discharging electrostatic energy, the electrostatic discharge part comprising a free end that emits electron beams when a voltage generated by the electrostatic energy and applied to the electrostatic discharge part is larger than a threshold value of the electrostatic discharge part; and

a light emitting part configured for receiving the discharged electrostatic energy, wherein when the light emitting part is bombarded by the electron beams, the light emitting part emits light by converting energy of the electron beams into light energy.

2. The electrostatic discharge protection device as claimed in claim 1 , wherein the light emitting part comprises phosphors.

3. The electrostatic discharge protection device as claimed in claim 2 , wherein the electrostatic discharge part comprises an iron film and a plurality of carbon nano-tubes formed on the iron film, the plurality of carbon nano-tubes emitting the electron beams when the voltage generated by the electrostatic energy and applied to the electrostatic discharge part is larger than the threshold value.

4. The electrostatic discharge protection device as claimed in claim 3 , further comprising a silicon substrate and a transparent cover, wherein the iron film is formed on a surface of the silicon substrate, the phosphors are coated on an inner surface of the transparent cover, the transparent cover is sealed with the silicon substrate, and the transparent cover and the silicon substrate cooperatively form an accommodating space having the iron film and the plurality of carbon nano-tubes therein.

5. The electrostatic discharge protection device as claimed in claim 4 , wherein the inner surface of the transparent cover is spherical.

6. The electrostatic discharge protection device as claimed in claim 4 , wherein an area of the iron film is smaller than that of the surface of the silicon substrate.

7. The electrostatic discharge protection device as claimed in claim 3 , further comprising: a silicon substrate, which comprises a first surface and a second surface at opposite sides thereof; a donor doping layer formed on the second surface of the silicon substrate; an aluminum film formed on the donor doping layer; and a transparent cover; wherein the iron film is formed on the first surface of the silicon substrate, the phosphors are coated on an inner surface of the transparent cover, the transparent cover is sealed with the silicon substrate, and the transparent cover and the silicon substrate cooperatively form an accommodating space having the iron film and the plurality of carbon nano-tubes therein.

8. The electrostatic discharge protection device as claimed in claim 7 , wherein the inner surface of the transparent cover is spherical.

9. The electrostatic discharge protection device as claimed in claim 7 , wherein an area of the iron film is smaller than that of the first surface of the silicon substrate.

10. The electrostatic discharge protection device as claimed in claim 7 , wherein an area of the donor doping layer is the same as that of the aluminum film.

11. A liquid crystal display, comprising an electrostatic discharge protection system, wherein the electrostatic discharge protection system comprises:

an electrostatic discharge part configured for discharging electrostatic energy, the electrostatic discharge part comprising a free end that emits electron beams when a voltage generated by the electrostatic energy and applied to the electrostatic discharge part is larger than a threshold value of the electrostatic discharge part; and

a light emitting part configured for receiving the discharged electrostatic energy, wherein when the light emitting part is bombarded by the electron beams, the light emitting part emits light by converting energy of the electron beams into light energy.

12. A method of fabricating an electrostatic discharge protection device, the method comprising:

providing an electrostatic discharge part, the electrostatic discharge part comprising a free end that emits electron beams when a voltage generated by the electrostatic energy and applied to the electrostatic discharge part is larger than a threshold value of the electrostatic discharge part;

providing a light emitting part, wherein when the light emitting part is bombarded by the electron beams, the light emitting part emits light by converting energy of the electron beams into light energy; and

attaching the light emitting part to the electrostatic discharge part.

13. The method as claimed in claim 12 , wherein providing the light emitting part comprises:

providing a transparent cover; and

coating phosphors on an inner surface of the transparent cover.

14. The method as claimed in claim 13 , wherein providing the electrostatic discharge part comprises:

providing a silicon substrate;

forming an iron film on a surface of the silicon substrate;

etching the iron film;

forming a plurality of carbon nano-tubes on the iron film; and

cutting the silicon substrate; and

attaching the light emitting part to the electrostatic discharge part comprises:

sealing the transparent cover with the silicon substrate.

15. The method as claimed in claim 14 , wherein the transparent cover is manufactured by a plastic extrusion method.

16. The method as claimed in claim 14 , wherein the transparent cover is manufactured by a glass heating and stamping method.

17. The method as claimed in claim 13 , wherein the inner surface of the transparent cover is spherical.

18. The method as claimed in claim 13 , wherein providing the electrostatic discharge part comprises:

providing a silicon substrate, the silicon substrate comprising a first surface and a second surface at opposite sides thereof;

forming an iron film on the first surface of the silicon substrate;

forming a donor doping layer on the second surface of the silicon substrate;

forming an aluminum film on the donor doping layer;

etching the iron film;

forming a plurality of carbon nano-tubes on the iron film; and

cutting the silicon substrate; and

attaching the light emitting part to the electrostatic discharge part comprises:

sealing the transparent cover with the silicon substrate.

19. The method as claimed in claim 18 , wherein an area of the donor doping layer is the same as that of the aluminum film.