Semiconductor device
In the present invention, a vertical MOSFET is formed by growing epitaxial Si on a SiC substrate and forming a Si oxide layer on the Si. In particular, a semiconductor device according to the present invention includes a SiC substrate, and an epitaxial Si layer formed on a surface of the SiC substrate, and a Si oxide layer formed on the epitaxial Si layer, and a gate electrode formed on the Si oxide layer, and a source region formed in the epitaxial Si layer, and a drain electrode connected to the SiC substrate.
1 . A semiconductor device comprising:
a SiC substrate;
an epitaxial silicon layer formed on a surface of the SiC substrate;
a silicon oxide layer formed on the epitaxial silicon layer;
a gate electrode formed on the silicon oxide layer;
a source region formed in the epitaxial silicon layer; and
a drain electrode connected to the SiC substrate.
2 . The semiconductor device according to claim 1 , wherein the SiC substrate is selected from a 3C—SiC (cubic silicon carbide) substrate, a 4H—SiC substrate, and a 6H—SiC substrate.