Photoresist composition and method of manufacturing a thin-film transistor substrate using the same

1. A method of manufacturing a thin-film transistor substrate, the method comprising:

sequentially forming a gate insulation layer, an active layer and a data metal layer on a base substrate having a gate line and a gate electrode;

coating a photoresist composition on the data metal layer to form a photoresist film, the photoresist composition comprising:

about 1 to about 70 parts by weight of a first binder resin for increasing heat resistance and including a repeat unit represented by

about 1 to about 70 parts by weight of a second binder resin for increasing adhesion ability and containing a repeat unit represented by

wherein R 1 and R 2 independently represent an alkyl group having 1 to 5 carbon atoms, and n and m independently represent a natural number;

about 0.5 to about 10 parts by weight of a photo-acid generator;

about 1 to about 20 parts by weight of a cross-linker; and

about 10 to about 200 parts by weight of a solvent;

exposing the photoresist film to light and developing the photoresist film to form a first photoresist pattern;

etching the data metal layer and the active layer using the first photoresist pattern as a mask to form a data line and a channel portion, respectively;

removing a portion of the first photoresist film to form a second photoresist pattern exposing a portion of the data metal layer; and

etching the data metal layer and the active layer using the second photoresist pattern as a mask to form a source electrode, a drain electrode and an ohmic contact pattern.

2. The method of claim 1 , wherein the first photoresist pattern has a channel region having a relatively small thickness.

3. The method of claim 1 , wherein the data metal layer is etched through a wet etching process.

4. The method of claim 1 , wherein the photo-acid generator includes at least one compound selected from the group consisting of an onium salt, a halogenated organic compound, a quinone diazide compound, a bis(sulfonyl)diazomethane compound, a sulfone compound, an organic acid-ester compound, an organic acid-amide compound, and an organic acid-imide compound.

5. The method of claim 1 , wherein the cross-linker includes at least one resin selected from the group consisting of an alkoxymethylated urea resin, an alkoxymethylated melamine resin, an alkoxymethylated uron resin and an alkoxymethylated glycol uryl resin.

6. The method of claim 1 , wherein the solvent includes at least one selected from the group consisting of a glycol ether, an ethylene glycol alkyl ether acetate and a diethylene glycol.

7. The method of claim 1 , wherein the photoresist composition further comprises about 0.1 to about 10 parts by weight of a compound represented by

wherein R 3 , R 4 , R 5 and R 6 independently represent an alkyl group having 1 to 4 carbon atoms.

8. The method of claim 1 , wherein the photoresist composition further comprises about 0.1 to about 5 parts by weight of a dye including at least one dye selected from the group consisting of a pyrazoleazo-based dye, an anilinoazo-based dye, an arylazo-based dye, a triphenylmethane-based dye, an anthraquinone-based dye, an anthrapyridone-based dye, a benzylidene-based dye, an oxonol-based dye, a pyrazoletriazoleazo-based dye, a pyridoneazo-based dye, a cyanine-based dye, a phenothiazine-based dye, a pyrrolopyrazoleazomethine-based dye, a xanthene-based dye, a phthalocyanine-based dye, a benzopyran-based dye and an indigo-based dye.

9. The method of claim 1 , wherein the photoresist composition further comprises about 0.1 to about 10 parts by weight of an additive including at least one selected from the group consisting of an adhesion promotion agent, a surfactant and an acid diffusion suppressant.