Dye-sensitized photoelectric conversion device and method for manufacturing same
Disclosed is a photoelectric conversion device comprising a first conductive support having a layer containing a semiconductor, a second conductive support arranged opposite to the first conductive support and having a counter electrode, and a charge transfer layer interposed between the first conductive support and the second conductive support at a certain distance from the supports, and a sealing agent which is arranged around the charge transfer layer in the form of a single or more than single layer for bonding the first conductive support and the second conductive support together.
1. A photoelectric conversion device, comprising: a first conductive support having a layer containing a semiconductor; a second conductive support arranged opposite to the first conductive support and having a counter electrode; a charge transfer layer interposed between the first conductive support and the second conductive support at a predetermined distance from the supports; and a bank of a continuous sealing agent which is arranged around the charge transfer layer in the form of a double or more layers and is interposed between the first conductive support and the second conductive support at a predetermined distance from said supports, wherein the bank of the continuous sealing agent adheres to the first conductive support and the second conductive support, wherein the photoelectric conversion device has neither an injection port for injecting said charge transfer layer nor a sealed portion of the injection port on the conductive supports and said bank of the continuous sealing agent, wherein the composition of the sealing agent used in a portion which contacts said charge transfer layer differs from that of the sealing agent in a portion which does not contact said charge transfer layer.
2. The photoelectric conversion device according to claim 1 , wherein the sealing agent serving as the innermost bank is an isobutylene resin-based sealing agent, and a sealing agent serving as a bank on the first outer side thereof is a thermosetting resin-based sealing agent or a combined photocurable and thermosetting-resin based sealing agent.
3. The photoelectric conversion device according to claim 1 or 2 , wherein a plurality of cells exist inside a pair of the first conductive support and the second conductive support, each cell being arranged in series electrically.
4. The photoelectric conversion device according to claim 1 , or 2 , wherein a collecting electrode is arranged on the first conductive support, and a foundation thin film layer made from a semiconductor precursor is provided on the collecting electrode.
5. The photoelectric conversion device according to claim 1 , or 2 , wherein a distance between the sealing agent serving as the innermost bank and the sealing agent serving as the bank on the first outer side thereof is in the range of 0 to 1 mm.
6. The photoelectric conversion device according to claim 5 , wherein a distance between the sealing agent serving as the innermost bank and a layer containing a semiconductor arranged on a further inner side thereof is in the range of 0 to 2 mm.
7. The photoelectric conversion device according to claim 3 , wherein a collecting electrode is arranged on the first conductive support, and a foundation thin film layer made from a semiconductor precursor is provided on the collecting electrode.
8. The photoelectric conversion device according to claim 3 , wherein a distance between the sealing agent serving as the innermost bank and the sealing agent serving as the bank on the first outer side thereof is in the range of 0 to 1 mm.
9. The photoelectric conversion device according to claim 2 , wherein a distance between the sealing agent serving as the innermost bank and a layer containing a semiconductor arranged on a further inner side thereof is in the range of 0 to 2 mm.
10. The photoelectric conversion device according to claim 8 , wherein a distance between the sealing agent serving as the innermost bank and a layer containing a semiconductor arranged on a further inner side thereof is in the range of 0 to 2 mm.