Oxide semiconductor, thin-film transistor and method for producing the same
View Patent ↗Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: In x+1 MZn y+1 Sn z O (4+1.5x+y+2z) (wherein M is Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4 and 0.5≦(x+y)/z≦3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.
1. A thin film transistor comprising an oxide semiconductor composed of amorphous oxide represented by general formula In x+1 MZn y+1 Sn z O (4+1.5x+y+2z) (in which M=Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4, and 0.5≦(x+y)/z≦3).
2. A thin-film transistor comprising an oxide semiconductor according to claim 1 .
3. A method for producing an oxide semiconductor, comprising:
forming amorphous oxide represented by general formula In x+1 MZn y+1 Sn z O (4+1.5x+y+2z) (in which M=Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4, and 0.5≦(x+y)/z≦3); and
heat-treating the amorphous oxide under an oxidizing gas atmosphere.
4. A method for producing an oxide semiconductor according to claim 3 , wherein the oxidizing gas at least contains oxygen radical, oxygen, water or ozone.
5. A method for producing a thin-film transistor, comprising:
forming amorphous oxide represented by general formula In x+1 MZn y+1 Sn z O (4+1.5x+y+2z) (in which M=Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4, and 0.5≧(x+y)/z≧3) on a gate insulating film or on source and drain electrodes; and
heat-treating the amorphous oxide under an oxidizing gas atmosphere.