Semiconductor device and method of manufacturing semiconductor device
View Patent ↗The present invention provides a semiconductor device and a method of manufacturing a semiconductor device in which a driving force can be increased by increasing a strain amount given by a stressed film in a MOS transistor including an elevated region. On a silicon substrate, a device isolation region 102 , a gate insulating film 103 , a gate electrode 104 , an extension 105 , and a sidewall insulating film 106 are formed. After that, an elevated region is formed, and a source/drain region 108 and a silicide layer 109 are formed. Subsequently, the sidewall insulating film 106 is etched to provide a gap from the elevated region 107 , and a stressed film 110 is buried in the gap.
1. A semiconductor device comprising:
a gate insulating film formed on a main plane of a semiconductor substrate;
a gate electrode formed on the gate insulating film;
a sidewall insulating film formed on side planes of the gate electrode;
a source/drain region formed while sandwiching the gate electrode;
an elevated region in which the source/drain region extends upward from the main plane of the semiconductor substrate while sandwiching the gate electrode and the sidewall insulating film; and
a stressed film including the gate electrode and the sidewall insulating film and extending to a position adjacent to the elevated region,
wherein the sidewall insulating film and the elevated region are not in contact with each other but a gap is provided therebetween, and the stressed film is buried in the gap.
2. The semiconductor device according to claim 1 , wherein any of single crystals of silicon, germanium, and carbon or mixed crystal thereof is buried in the source/drain region.
3. The semiconductor device according to claim 1 , wherein a semiconductor thin layer for forming the elevated region is made of any of single crystals of silicon, germanium, and carbon or mixed crystal thereof, and includes a single-layer or multilayer structure of the crystal(s).
4. The semiconductor device according to claim 1 , wherein an end of the elevated region includes a single facet plane or a plurality of facet planes.
5. The semiconductor device according to claim 4 , wherein a main plane of the semiconductor substrate is a (100) plane, a channel direction of the gate electrode is <110>, and the facet plane is a (111) plane, a (311) plane or a (511) plane, or includes a plane direction equivalent to any of these planes.
6. The semiconductor device according to claim 4 , wherein a main plane of the semiconductor substrate is a (100) plane, a channel direction of the gate electrode is <100>, and the facet plane is a (110) plane, a (310) plane or a (510) plane, or includes a plane direction equivalent to any of these planes.
7. The semiconductor device according to claim 2 , wherein a semiconductor thin layer for forming the elevated region is made of any of single crystals of silicon, germanium, and carbon or mixed crystal thereof, and includes a single-layer or multilayer structure of the crystal(s).
8. The semiconductor device according to claim 2 , wherein an end of the elevated region includes a single facet plane or a plurality of facet planes.
9. The semiconductor device according to claim 3 , wherein an end of the elevated region includes a single facet plane or a plurality of facet planes.
10. A semiconductor device comprising:
a gate insulating film formed on a main plane of a semiconductor substrate;
a gate electrode formed on the gate insulating film;
a source/drain region formed while sandwiching the gate electrode;
an elevated region in which the source/drain region extends upward from the main plane of the semiconductor substrate while sandwiching the gate electrode; and
a stressed film including the gate electrode and extending to a position adjacent to the elevated region,
wherein the gate electrode and the elevated region are not in contact with each other but a gap is provided therebetween, and the stressed film is buried in the gap.
11. The semiconductor device according to claim 10 , wherein any of single crystals of silicon, germanium, and carbon or mixed crystal thereof is buried in the source/drain region.
12. The semiconductor device according to claim 10 , wherein a semiconductor thin layer for forming the elevated region is made of any of single crystals of silicon, germanium, and carbon or mixed crystal thereof, and includes a single-layer or multilayer structure of the crystal(s).
13. The semiconductor device according to claim 10 , wherein an end of the elevated region includes a single facet plane or a plurality of facet planes.
14. A method of manufacturing a semiconductor device, comprising:
forming a gate insulating film on a main plane of a semiconductor substrate;
forming a gate electrode on the gate insulating film;
forming a sidewall insulating film on side planes of the gate electrode;
forming a source/drain region while sandwiching the gate electrode;
forming an elevated region in which the source/drain region extends upward from the main plane of the semiconductor substrate while sandwiching the gate electrode and the sidewall insulating film;
forming a gap between the sidewall insulating film and the elevated region; and
burying a stressed film in the gap.
15. The method of manufacturing a semiconductor device according to claim 14 , wherein any of single crystals of silicon, germanium, and carbon or mixed crystal thereof is buried in formation of the source/drain region.
16. The method of manufacturing a semiconductor device according to claim 14 , wherein a semiconductor thin layer is made of any of single crystals of silicon, germanium, and carbon or mixed crystal thereof, and the elevated region is formed so as to include a single-layer or multilayer structure of the crystal(s).
17. The method of manufacturing a semiconductor device according to claim 14 , wherein an end of the elevated region includes a single facet plane or a plurality of facet planes.
18. The method of manufacturing a semiconductor device according to claim 17 , wherein a main plane of the semiconductor substrate is a (100) plane, a channel direction of the gate electrode is <110>, and the facet plane is a (111) plane, a (311) plane or a (511) plane, or includes a plane direction equivalent to any of these planes.
19. The method of manufacturing a semiconductor device according to claim 17 , wherein a main plane of the semiconductor substrate is a (100) plane, a channel direction of the gate electrode is <100>, and the facet plane is a (110) plane, a (310) plane or a (510) plane, or includes a plane direction equivalent to any of these planes.
20. The method of manufacturing a semiconductor device according to claim 15 , wherein a semiconductor thin layer is made of any of single crystals of silicon, germanium, and carbon or mixed crystal thereof, and the elevated region is formed so as to include a single-layer or multilayer structure of the crystal(s).