IP Library Granted Patent US 7,884,310
Granted Patent B2
US 7,884,310 · App. 12/090,404 · Granted Feb 8, 2011

Device and method for the demodulation electromagnetic wave fields having separated detection and demodulation regions

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Quick Facts
Patent No.
US 7,884,310
App. No.
12/090,404
Granted
Feb 8, 2011
Kind
B2
Abstract

A new pixel in semiconductor technology comprises a photo-sensitive detection region ( 1 ) for converting an electromagnetic wave field into an electric signal of flowing charges, a separated demodulation region ( 2 ) with at least two output nodes (D 10 , D 20 ) and means (IG 10 , DG 10 , IG 20 , DG 20 ) for sampling the charge-current signal at least two different time intervals within a modulation period. A contact node (K 2 ) links the detection region ( 1 ) to the demodulation region ( 2 ). A drift field accomplishes the transfer of the electric signal of flowing charges from the detection region to the contact node. The electric signal of flowing charges is then transferred from the contact node (K 2 ) during each of the two time intervals to the two output nodes allocated to the respective time interval. The separation of the demodulation and the detection regions provides a pixel capable of demodulating electromagnetic wave field at high speed and with high sensitivity.

Claims (52)

1. A pixel device in a semiconductor substrate (SUB 1 ; SUB 10 ) adapted to detect and/or demodulate an incident modulated electromagnetic wave field, comprising:

detection means ( 1 ) for converting the incident electromagnetic wave field into an electric signal of flowing charges,

sampling means (LG, MG, RG, IG 1 , DG 1 , IG 2 , DG 2 ; GS, DG 10 , IG 10 , DG 20 , IG 20 ) for sampling the electric signal of flowing charges at least two different time intervals within a modulation period,

at least two output nodes (D 1 , D 2 ; S 1 , S 2 ) for electric signals sampled by the sampling means,

demodulation means ( 4 ) comprising the at least two output nodes and the sampling means, the sampling means having second transfer means (LG, MG, RG; GS), and

a contact node (K 2 ) arranged between the detection means and the demodulation means, the detection means ( 1 ) comprise first transfer means (GM 1 ; GM 1 . i ; FGi; FDi; VGi), the first transfer means are adapted to transfer the electric signal of flowing charges to the contact node, and

the second transfer means are adapted to transfer the electric signal of flowing charges from the contact node during each of the at least two time intervals to the at least two output nodes allocated to the respective time interval.

2. The pixel device according to claim 1 , wherein the size of the demodulation means is smaller than the size of the detection means.

3. The pixel device according to claim 1 , wherein the detection means are photo-sensitive.

4. The pixel device according to claim 1 , wherein the first transfer means comprise a gate structure (GM 1 ; GM 1 . i ) adapted to define a static drift field enabling the transfer of the electric signal of flowing charges to the contact node (K 2 ).

5. The pixel device according to claim 1 , wherein the second transfer means comprises a plurality of gate electrodes (LG, MG, RG) adapted to define a conduction channel from the contact node during each of the at least two time intervals to the at least two output nodes allocated to the respective time interval.

6. The pixel device according to claim 5 , wherein the gate electrodes are CCD gate electrodes.

7. The pixel device according to claim 1 , wherein an accumulation region (IG 1 , IG 2 ; IG 10 , IG 20 ) is allocated to each of the at least two output nodes in order to accumulate the charge carriers of the electric signal of flowing charges transferred to the corresponding output node (D 1 , D 2 ).

8. A three-dimensional imaging system, comprising

a light source (IM) for illuminating a remote scene (OB) with a modulated electromagnetic wave field (ML 1 ),

a plurality of pixels (SN) for sensing and demodulating a modulated electromagnetic signal, and

control means (CB) for providing a timing regulation to the plurality of pixels,

a two dimensional array of pixel devices, each one of the pixel devices comprising:

detection means ( 1 ) for converting the incident electromagnetic wave field into an electric signal of flowing charges,

sampling means (LG, MG, RG, IG 1 , DG 1 , IG 2 , DG 2 ; GS, DG 10 , IG 10 , DG 20 , IG 20 ) for sampling the electric signal of flowing charges at least two different time intervals within a modulation period, and

at least two output nodes (D 1 , D 2 ; S 1 , S 2 ) for electric signals sampled by the sampling means,

demodulation means ( 4 ) comprising the at least two output nodes and the sampling means, the sampling means having second transfer means (LG, MG, RG; GS), and

a contact node (K 2 ) arranged between the detection means and the demodulation means, the detection means ( 1 ) comprise first transfer means (GM 1 ; GM 1 . i ; FGi; FDi; VGi), the first transfer means are adapted to transfer the electric signal of flowing charges to the contact node, and

the second transfer means are adapted to transfer the electric signal of flowing charges from the contact node during each of the at least two time intervals to the at least two output nodes allocated to the respective time interval.

9. The three-dimensional imaging system according to claim 8 , wherein the pixel devices ((DPx,y),(DP(x+1,y) . . . ) are arranged in rows and columns of a two-dimensional array.

10. The three-dimensional imaging system according to claim 8 , wherein each one of the pixel devices is linked to a voltage generator (CPG) for the generation of a drift field in the demodulation means of the pixel devices at the same time and each pixel device is linked to a reset generator for resetting its sampled value at the same time.

11. An imaging system, comprising

a light source for illuminating a scene with a modulated electromagnetic signal;

a sensor comprising an array of pixel devices for sensing and demodulating the modulated electromagnetic signal from the scene that is incident on the sensor; and

controller for providing timing regulation to the sensor and the light source;

wherein the pixel devices comprise:

at least one photo-sensitive detection region in which the incident electromagnetic signal is converted into charge carriers, the photo-sensitive detection region having a lateral drift field for moving the charge carriers, and

a demodulation region including at least two output nodes for receiving the charge carriers and a modulated drift field for moving the charge carriers to either of the at least two output nodes in dependence upon at least two time intervals within a modulation period of the modulated electromagnetic signal based on the timing regulation of the controller, and

wherein the lateral drift field of the photo-sensitive detection region moves the charge carriers into the demodulation region.

12. An imaging system according to claim 11 , wherein a surface area of the demodulation regions is smaller than a surface area of the photo-sensitive detection region.

13. An imaging system according to claim 11 , wherein the lateral drift field is generated a gate structure adapted to define a static drift field.

14. An imaging system according to claim 11 , wherein modulated drift field comprises a plurality of gate electrodes defining a conduction channel for the charge carries from the photo-sensitive detection region during each of the at least two time intervals to the at least two output nodes allocated to the respective time interval.

15. An imaging system according to claim 14 , wherein the gate electrodes are charge coupled device (CCD) gate electrodes.

16. An imaging system according to claim 14 , wherein the lateral drift field is generated a gate structure adapted to define a static drift field.

17. An imaging system according to claim 11 , wherein an accumulation region is allocated to each of the at least two output nodes in order to accumulate the charge carriers transferred to the corresponding output node.

18. An imaging system according to claim 11 , wherein the lateral drift field is static over at least a modulation period of the modulated electromagnetic signal.

19. An imaging method, comprising

illuminating a remote scene with a modulated electromagnetic signal;

receiving modulated electromagnetic radiation from the scene in a photo-sensitive detection region in which the electromagnetic radiation is converted into charge carriers;

generating a lateral drift field for moving the charge carriers from the photo-sensitive detection region to a demodulation region; and

moving the charge carrier with a modulated drift field in the demodulation region to either of at least two output nodes in independence upon at least two time intervals within a modulation period of the modulated electromagnetic signal.

20. An imaging method according to claim 19 , further comprising generating the lateral drift field in a gate structure adapted to define a static drift field.

21. An imaging method according to claim 19 , wherein modulated drift field comprises a plurality of gate electrodes defining a conduction channel for the charge carries from the photo-sensitive detection region during each of the at least two time intervals to the at least two output nodes allocated to the respective time interval.

22. An imaging method according to claim 19 , wherein the gate electrodes are charge coupled device (CCD) gate electrodes.

23. An imaging method according to claim 22 , wherein the lateral drift field is generated a gate structure adapted to define a static drift field.

24. An imaging method according to claim 19 , further comprising moving the charge carriers from the output nodes to respective accumulation regions in which the charge carriers are accumulated the charge carriers transferred to the corresponding output node.

25. An imaging method according to claim 19 , further comprising maintaining the lateral drift field in a static state over at least a modulation period of the modulated electromagnetic signal.

Assignments (3)
CHANGE OF NAME Recorded Nov 3, 2025
From: AMS SENSORS SINGAPORE PTE. LTD.
To: AMS-OSRAM ASIA PACIFIC PTE. LTD.
Reel/Frame 073476/0659 →
CHANGE OF NAME Recorded Mar 6, 2019
From: HEPTAGON MICRO OPTICS PTE. LTD.
To: AMS SENSORS SINGAPORE PTE. LTD.
Reel/Frame 048513/0922 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 4, 2015
From: MESA IMAGING AG
To: HEPTAGON MICRO OPTICS PTE. LTD.
Reel/Frame 037211/0220 →