Component operated by guided acoustic waves

1. A component working with guided acoustic waves, the component comprising:

a layer system configured to guide waves in a lateral plane, the layer system comprising:

a piezoelectric layer;

electrodes on the piezoelectric layer for exciting the waves,

a dielectric layer with an acoustic impedance; and

an adjustment layer with an acoustic impedance,

wherein:

a ratio of the acoustic impedance of the adjustment layer to the acoustic impedance of the dielectric layer is greater than 1.5;

an acoustic impedance of the adjustment layer is greater than the acoustic impedance of each of the other layers included in the layer system, the adjustment layer is configured to substantially influence an acoustic reflection of the waves and the adjustment layer is spaced apart from the piezoelectric layer in at least one spacing area;

the electrodes comprise a first electrode layer with an acoustic impedance between the piezoelectric layer and the adjustment layer, wherein a ratio of the acoustic impedance of the first electrode layer to the acoustic impedance of the dielectric layer is between 0.5 and 2; and

a height of the first electrode layer is configured such that the component has a temperature coefficient of a maximum of 25 ppb/K.

2. A component working with guided acoustic waves, the component comprising:

a layer system configured to guide waves in a lateral plane, the layer system comprising:

a piezoelectric layer;

electrodes on the piezoelectric layer for exciting the waves,

a dielectric layer with an acoustic impedance, and

an adjustment layer with an acoustic impedance;

wherein a ratio of the acoustic impedance of the adjustment layer to the acoustic impedance of the dielectric layer is greater than 1.5, and

the adjustment layer is spaced apart from the piezoelectric layer in at least one spacing area and is arranged between the electrodes and the dielectric layer.

3. The component of claim 2 , wherein the adjustment layer is deposited directly on the electrodes and on the piezoelectric layer in areas between the electrodes.

4. A component working with guided acoustic waves, the component comprising:

a layer system configured to guide waves in a lateral plane, the layer system comprising:

a piezoelectric layer;

electrodes on the piezoelectric layer for exciting the waves,

a dielectric layer with an acoustic impedance; and

an adjustment layer with an acoustic impedance,

wherein:

a ratio of the acoustic impedance of the adjustment layer to the acoustic impedance of the dielectric layer is greater than 1.5, and

an acoustic impedance of the adjustment layer is greater than the acoustic impedance of each of the other layers included in the layer system, the adjustment layer is configured to substantially influence an acoustic reflection of the waves and the adjustment layer is spaced apart from the piezoelectric layer in at least one spacing area;

the electrodes comprise a first electrode layer with an acoustic impedance between the piezoelectric layer and the adjustment layer, wherein a ratio of the acoustic impedance of the first electrode layer to the acoustic impedance of the dielectric layer is between 0.5 and 2; and

the first electrode layer is at least 50 nm thick.

5. The component of claim 4 , wherein the ratio of the acoustic impedance of the adjustment layer to the acoustic impedance of the dielectric layer is greater than 2.5.

6. The component of claim 4 , wherein the electrodes are between the piezoelectric layer and the dielectric layer.

7. The component of claim 4 , wherein the dielectric layer is between the adjustment layer and the piezoelectric layer.

8. The component of claim 4 , wherein the adjustment layer is electrically insulating.

9. The component of claim 8 , wherein the adjustment layer is configured to form a seal with the piezoelectric layer outside the at least one spacing area.

10. The component of claim 4 , wherein the adjustment layer is electrically conductive.

11. The component of claim 4 , wherein:

the adjustment layer is configured to form a second electrode layer, and

the first electrode layer is between the piezoelectric layer and the second electrode layer.

12. The component of claim 4 , wherein the dielectric layer has a temperature coefficient of the elastic constant opposite that of the piezoelectric layer.

13. The component of claim 4 , wherein the dielectric layer comprises SiO 2 .

14. The component of claim 4 , wherein the acoustic impedance of the first electrode layer is less than the acoustic impedance of the adjustment layer.

15. The component of claim 4 , wherein:

the layer system further comprises a cover layer; and

the dielectric layer is between the cover layer and the piezoelectric layer.

16. The component of claim 15 , wherein the cover layer is formed by the dielectric layer.

17. The component of claim 15 , wherein the cover layer comprises elementary silicon.

18. A component working with guided acoustic waves, the component comprising:

a layer system configured to guide waves in a lateral plane, the layer system comprising:

a piezoelectric layer;

electrodes on the piezoelectric layer for exciting the waves,

a dielectric layer with an acoustic impedance, and

an adjustment layer with an acoustic impedance, wherein:

a ratio of the acoustic impedance of the adjustment layer to the acoustic impedance of the dielectric layer is greater than 1.5,

the adjustment layer is spaced apart from the piezoelectric layer in at least one spacing area,

the electrodes comprise a first electrode layer with an acoustic impedance between the piezoelectric layer and the adjustment layer, wherein a ratio of the acoustic impedance of the first electrode layer to the acoustic impedance of the dielectric layer is between 0.5 and 2; and

the first electrode layer is at least 50 nm thick.

19. A component working with guided acoustic waves, the component comprising:

a layer system configured to guide waves in a lateral plane, the layer system comprising:

a piezoelectric layer;

electrodes on the piezoelectric layer for exciting the waves,

a dielectric layer with an acoustic impedance, and

an adjustment layer with an acoustic impedance, wherein:

a ratio of the acoustic impedance of the adjustment layer to the acoustic impedance of the dielectric layer is greater than 1.5,

the adjustment layer is spaced apart from the piezoelectric layer in at least one spacing area,

the electrodes comprise a first electrode layer with an acoustic impedance between the piezoelectric layer and the adjustment layer, wherein a ratio of the acoustic impedance of the first electrode layer to the acoustic impedance of the dielectric layer is between 0.5 and 2; and

a height of the first electrode layer is configured such that the component has a temperature coefficient of a maximum of 25 ppb/K.