IP Library Granted Patent US 8,079,248
Granted Patent B2
US 8,079,248 · App. 12/093,667 · Granted Dec 20, 2011

Moisture sensor

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Quick Facts
Patent No.
US 8,079,248
App. No.
12/093,667
Granted
Dec 20, 2011
Kind
B2
Abstract

A moisture sensor includes interdigitated first and second electrodes formed in trenches A porous low-k dielectric is provided between the electrodes. The electrodes are of Cu surrounded by a barrier layer to protect the Cu from corrosion. TiN may be used as barrier layer and selectively deposited barrier material such as CoWB, MoWB or NiMoP as barrier layer.

Claims (33)

1. A moisture sensor, comprising:

first and second conductive electrodes each having at least one element, the elements of the first and second conductive electrodes extending in parallel with one another for a total parallel length of at least 0.3 mm and spaced apart by no more than 1 μm; and

porous dielectric having a porosity greater than 10% separating the first and second electrodes.

2. A moisture sensor according to claim 1 , wherein the first and second conductive electrodes are interdigitated combs, the teeth of the combs being the elements extending in total for the parallel length of at least 0.3 mm, the teeth of the first and second conductive elements being spaced from each other at the spacing of no more than 1 μm.

3. A moisture sensor according to claim 1 , wherein the porous dielectric is of low-k dielectric orthosilicate glass having a dielectric constant less than 3.0.

4. A moisture sensor according to claim 1 , further comprising a barrier layer extending around the conductive electrodes for protecting the conductive electrodes from corrosion.

5. A moisture sensor according to claim 4 , wherein the barrier layer includes a first barrier material on the sides and base of the conductive electrodes and second barrier material on the top of the conductive electrodes, the first and second barrier materials being different.

6. A moisture sensor according to claim 5 , wherein the second barrier material is a barrier material that can be selectively deposited on the conductive electrode material.

7. A moisture sensor according to claim 5 , wherein the second barrier material is a dielectric barrier.

8. A moisture sensor according to claim 5 , wherein the first barrier material is metal.

9. Use of a moisture sensor according to claim 5 , comprising:

applying an electric field from 0.5 to 1 MV/cm between the first and second electrodes, and

measuring the current passing between the first and second electrodes as a measure of the moisture content.

10. A method of manufacturing a moisture sensor, comprising:

depositing porous dielectric with a porosity of at least 10%;

etching through the porous dielectric to form first and second trenches each having at least one element, the elements of the first and second trenches extending in parallel with one another for a total parallel length of at least 0.3 mm and being spaced apart by no more than 1 μm; and

filling the trenches with conductor to form first and second conductive electrodes having elements extending in parallel for a total parallel length of at least 0.3 mm and spaced apart by no more than 1 μm.

11. A method according to claim 10 , wherein the first and second trenches and first and second electrodes are interdigitated combs, the teeth of the combs extending in total for the parallel length of at least 0.3 mm and the teeth of each comb being between the teeth of the other comb at the spacing of no more than 1 μm.

12. A method according to claim 10 , wherein the porous dielectric is a low-k dielectric with a dielectric constant less than 3.0.

13. A method according to claim 10 , wherein the step of filling the trenches includes:

depositing a barrier layer of a first barrier material on the sidewalls and base of the trenches; and

filling the trenches with a conductive filling material.

14. A method according to claim 13 , further comprising depositing a second barrier material on the conductive filling material by selective deposition after filling the trenches with the conductive filling material to form a barrier layer extending around the top, sides and base of the conductive filling material.

15. A moisture sensor, comprising:

first and second conductive electrodes each having at least one element, the elements of the first and second conductive electrodes extending in parallel with one another for a total parallel length of at least 0.3 mm and spaced apart by no more than 1 μm;

porous dielectric having a porosity greater than 10% separating the first and second electrodes;

a corrosion protector, configured and arranged around the conductive electrodes from the corrosion,

the corrosion protector and the porous dielectric being configured and arranged with the first and second conductive electrodes for passing current between the first and second conductive electrodes in response to

an electric field from 0.5 to 1 MV/cm between the first and second electrodes; and

moisture sufficiently present to increase the current by at least an order of magnitude in the presence of the moisture than without.

16. The moisture sensor according to claim 15 wherein the moisture is sufficiently present to increase the current by at least two orders of magnitude in the presence of the moisture than without.

17. The moisture sensor according to claim 15 wherein the barrier layer includes a first barrier material on the sides and base of the conductive electrodes and second barrier material on the top of the conductive electrodes, the first and second barrier materials being different.

18. The moisture sensor according to claim 15 wherein the barrier layer includes a first barrier material on the sides and base of the conductive electrodes and second barrier material on the top of the conductive electrodes, the first and second barrier materials being different; and the moisture is sufficiently present to increase the current by at least two orders of magnitude in the presence of the moisture than without.

Assignments (15)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2020
From: AMS AG; AMS INTERNATIONAL AG; AMS SENSORS UK LIMITED; AMS SENSORS GERMANY GMBH
To: SCIOSENSE B.V.
Reel/Frame 052769/0820 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
PATENT RELEASE Recorded Aug 17, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 039707/0471 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
CORRECTIVE ASSIGNMENT TO CORRECT THE CHANGE THE NATURE OF CONVEYANCE TO PATENT RELEASE AND CORRECT THE UNDERLYING DOCUMENT PREVIOUSLY RECORDED ON REEL 038914 FRAME 0094. ASSIGNOR(S) HEREBY CONFIRMS THE CERTIFICATE RE TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS. Recorded Jul 12, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC., AS GLOBAL COLLATERAL AGENT; MORGAN STANLEY SENIOR FUNDING, INC., AS RCF ADMINISTRATIVE AGENT; MORGAN STANLEY SENIOR FUNDING, INC., AS THE NOTES COLLATERAL AGENT
To: NXP B.V.
Reel/Frame 039309/0906 →
CERTIFICATE RE TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS Recorded Jun 8, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC., AS GLOBAL COLLATERAL AGENT; MORGAN STANLEY SENIOR FUNDING, INC., AS RCF ADMINISTRATIVE AGENT; MORGAN STANLEY SENIOR FUNDING, INC., AS THE NOTES COLLATERAL AGENT
To: NXP B.V.
Reel/Frame 038914/0094 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 7, 2015
From: NXP B.V.
To: AMS INTERNATIONAL AG
Reel/Frame 036015/0613 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2008
From: HOOFMAN, ROMANO; MICHELON, JULIEN MAURICE MARCEL
To: NXP B.V.
Reel/Frame 020946/0289 →