Surface acoustic wave resonator, and surface acoustic wave filter and antenna duplexer in which the surface acoustic wave resonator is used
View Patent ↗The present invention provides a surface acoustic wave resonator capable of improving a leak of a surface acoustic wave in the transverse direction and reducing the spurious and having superior characteristics. In a surface acoustic wave filter according to the present invention, an interdigital transducer electrode and reflector electrodes are formed on a piezoelectric substrate, and a SiO 2 thin film is formed on at least a portion of the interdigital transducer electrode. The interdigital transducer electrode includes a bus-bar electrode region, a dummy electrode region and a finger overlap region, such that the SiO 2 thin film is removed from upper sections of the bus-bar electrode regions of the interdigital transducer electrode.
1. A surface acoustic wave resonator comprising:
a substrate made of lithium niobate;
an interdigital transducer electrode provided on an upper surface of the substrate; and
a dielectric thin film covering at least a portion of the interdigital transducer electrode,
wherein the interdigital transducer electrode includes a bus-bar electrode region, a dummy electrode region and a finger overlap region, and
wherein (i) a thickness of the dielectric thin film covering at least one of the bus-bar electrode region and the dummy electrode region is smaller than a thickness of the dielectric thin film covering the finger overlap region, or (ii) the thickness of the dielectric thin film covering the at least one of the bus-bar electrode region and the dummy electrode region is zero.
2. The surface acoustic wave resonator as claimed in claim 1 , wherein at least one of the bus-bar electrode region and the dummy electrode region is not covered by the dielectric thin film, so as to be exposed out of the dielectric thin film.
3. The surface acoustic wave resonator as claimed in claim 1 , wherein the interdigital transducer electrode is apodization-weighted.
4. The surface acoustic wave resonator as claimed in claim 1 , wherein the substrate is a rotary Y-cut substrate in which a cut angle is −10 to +30 degrees.
5. The surface acoustic wave resonator as claimed in claim 1 , wherein the dielectric thin film is a SiO 2 thin film.
6. The surface acoustic wave resonator as claimed in claim 1 , wherein the dummy electrode region is subjected to metallized dummy electrode weighting.
7. The surface acoustic wave resonator as claimed in claim 6 , wherein the dummy electrode region is not covered by the dielectric thin film, so as to be exposed out of the dielectric thin film.
8. The surface acoustic wave resonator as claimed in claim 6 , wherein the finger overlap region is of a normal type, which is not subjected to apodized-weighting.
9. The surface acoustic wave resonator as claimed in claim 6 , wherein the substrate is a rotary Y-cut substrate in which a cut angle is −10 to +30 degrees.
10. The surface acoustic wave resonator as claimed in claim 6 , wherein the dielectric thin film is a SiO 2 thin film.
11. A surface acoustic wave filter comprising a plurality of surface acoustic wave resonators, wherein at least one of the plurality of surface acoustic wave resonators is the surface acoustic wave resonator of claim 6 .
12. A surface acoustic wave filter comprising a plurality of surface acoustic wave resonators, wherein at least one of the plurality of surface acoustic wave resonators is the surface acoustic wave resonator of claim 1 .
13. An antenna duplexer comprising a transmission filter and a reception filter, wherein the transmission filter or the reception filter is the surface acoustic wave filter of claim 12 .
14. A surface acoustic wave resonator comprising:
a substrate made of lithium niobate;
an interdigital transducer electrode provided on an upper surface of the substrate, and
a dielectric thin film covering at least a portion of the interdigital transducer electrode,
wherein the interdigital transducer electrode includes bus-bar electrode regions, dummy electrode regions and a finger overlap region, and
wherein the dielectric thin film does not cover at least one of a bus-bar electrode region of the bus-bar electrode regions and a dummy electrode region of the dummy electrode regions.
15. The surface acoustic wave resonator as claimed in claim 14 , wherein a dummy electrode region of the dummy electrode regions is subjected to metallized dummy electrode weighting.
16. A surface acoustic wave filter comprising a plurality of surface acoustic wave resonators, wherein at least one of the plurality of surface acoustic wave resonators is the surface acoustic wave resonator of claim 14 .
17. An antenna duplexer comprising a transmission filter and a reception filter, wherein the transmission filter and the reception filter are the surface acoustic wave filter of claim 16 .