Electroacoustic component

1. An electroacoustic component comprising:

a carrier substrate;

a monocrystalline piezosubstrate having piezoelectric properties, and

a layer system between the carrier substrate and the piezosubstrate;

wherein the piezosubstrate is 3-30λ thick, where λ is the wavelength of a guided bulk acoustic wave at a center frequency of the electroacoustic component, and the thickness of the piezosubstrate is at most half a thickness of the carrier substrate.

2. The component of claim 1 , wherein the thickness of the piezosubstrate is at most 30% of the thickness of the carrier substrate.

3. The electroacoustic component of claim 1 , wherein:

the layer system is configured to conduct guided bulk acoustic waves,

the piezosubstrate comprises a substrate thinned down by a mechanical process.

4. The component of claim 3 , wherein a thickness of the piezosubstrate is at most half a thickness of the carrier substrate.

5. The component of claim 3 , wherein the thickness of piezosubstrate is at most 30% of the thickness of carrier substrate.

6. The component of claim 1 , wherein:

the layer system comprises a metal layer and a dielectric layer; and

transducers and contact areas are formed in the metal layer.

7. The component of claim 6 , wherein the dielectric layer has a planar boundary surface.

8. The component of claim 6 , wherein a layer thickness of the dielectric layer is between 0.01λ, and λ.

9. The component of claim 6 wherein the dielectric layer has an opposite temperature dependence of the elastic constants relative to the carrier substrate.

10. The component of claim 6 , wherein the dielectric layer comprises silicon oxide or tellurium dioxide.

11. The component of claim 1 , wherein:

the piezosubstrate comprises LiTaO 3 ; and

the carrier substrate comprises Si.

12. The component of claim 1 , wherein the material of the carrier substrate has a lower coefficient of linear thermal expansion than the material of the piezosubstrate.

13. The component of claim 1 , further comprising:

a cover substrate having a coefficient of thermal expansion smaller than the coefficient of thermal expansion of the piezosubstrate; wherein

the piezosubstrate is between the cover substrate and the layer system.

14. The electroacoustic component of claim 1 , further comprising:

a cover substrate; and

wherein the piezosubstrate is between the cover substrate and the layer system; and

coefficients of thermal expansion of the cover substrate and the carrier substrate are less than a coefficient of thermal expansion of the piezosubstrate.

15. The component of claim 14 , wherein the cover substrate and the carrier substrate each have a temperature dependence of the elastic constants opposite to that of the piezosubstrate.

16. The component of claim 14 , wherein a thickness of the piezosubstrate is less than a thickness of the cover substrate.

17. The component of claim 14 , wherein a thickness of the piezosubstrate is less than a sum of the thicknesses of the cover substrate and the carrier substrate.

18. An electroacoustic component comprising;

a layer system configured to conduct guided bulk acoustic waves,

a carrier substrate; and

a piezosubstrate having piezoelectric properties, the piezosubstrate comprising a monocrystalline structure at most 50λ thick, where λ is the wavelength of a guided bulk acoustic wave at a center frequency of the electroacoustic component.

19. The component of claim 18 , wherein the piezosubstrate comprises a substrate thinned down by a mechanical process.

20. The component of claim 19 , wherein a thickness of the piezosubstrate is at most half a thickness of the carrier substrate.

21. The component of claim 19 , wherein the thickness of piezosubstrate is at most 30% of the thickness of carrier substrate.

22. The component of claim 18 , further comprising:

a cover substrate; and

wherein the layer system is between the carrier substrate and the piezosubstrate and the piezosubstrate is between the cover substrate and the layer system; and

coefficients of thermal expansion of the cover substrate and the carrier substrate are less than a coefficient of thermal expansion of the piezosubstrate.

23. The component of claim 22 , wherein the cover substrate and the carrier substrate each have a temperature dependence of the elastic constants opposite to that of the piezosubstrate.

24. The component of claim 22 , wherein a thickness of the piezosubstrate is less than a thickness of the cover substrate.

25. The component of claim 22 , wherein a thickness of the piezosubstrate is less than a sum of the thicknesses of the cover substrate and the carrier substrate.