Naphthalenetetracarboxylic acid derivatives and their use as semiconductors
The present invention relates to naphthalenetetracarboxylic acid derivates, to a process for their preparation and to their use, especially as an n-type semiconductor.
1. A compound of the general formula I
where
R 1 and R 2 are fluorine and R 3 and R 4 are hydrogen, or
R 1 and R 3 are fluorine and R 2 and R 4 are hydrogen, or
R 1 and R 4 are fluorine and R 2 and R 3 are hydrogen,
Y 1 is NR a , where R a is hydrogen or unsubstituted or substituted alkyl, alkenyl, alkadienyl, alkynyl, cycloalkyl, bicycloalkyl, cycloalkenyl, heterocycloalkyl, aryl or heteroaryl,
Y 2 is NR b , where R b is hydrogen or unsubstituted or substituted alkyl, alkenyl, alkadienyl, alkynyl, cycloalkyl, bicycloalkyl, cycloalkenyl, heterocycloalkyl, aryl or heteroaryl,
Z 1 and Z 2 are each O and
Z 3 and Z 4 are each O.
2. A process for preparing a compound of the formula (I.a)
in which
at least one of the R 1 , R 2 , R 3 and R 4 radicals is a substituent which is selected from Br, F and CN, and the remaining R 1 , R 2 , R 3 and R 4 radicals are each hydrogen,
comprising:
i) subjecting naphthalene-1,8;4,5-tetracarboxylic dianhydride to a bromination with N,N′-dibromoisocyanuric acid in the presence of more than 20% oleum to obtain 2,3,6,7-tetrabromonaphthalene-1,8;4,5-tetracarboxylic dianhydride
ii) optionally, subjecting the 2,3,6,7-tetrabromonaphthalene-1,8;4,5-tetracarboxylic dianhydride to a substitution of the bromine atoms by fluorine or by cyano groups, or subjecting the 2,3,6,7-tetrabromonaphthalene-1,8;4,5-tetracarboxylic dianhydride to a partial substitution of the bromine atoms by hydrogen and, optionally, by fluorine or by cyano groups, and
iii) optionally, subjecting the compounds obtained in ii) to at least one separation and/or purification.
3. The process according to claim 2 , wherein an alkali metal fluoride is used during the reaction in ii).
4. The process according to claim 2 , wherein
a copper cyanide or
an alkali metal cyanide or zinc cyanide in the presence of Pd(II) salts is used during the reaction in ii).
5. The process according to claim 2 , wherein a solvent used in ii) is at least one aprotic polar solvent.
6. The process according to claim 2 , wherein a complexing agent is used additionally in ii).
7. The process according to claim 2 , wherein a phase transfer catalyst which is selected from 2-azaallenium compounds, carbophosphazenium compounds, aminophosphonium compounds and diphosphazenium compounds is additionally used in ii).
8. A process for preparing a compound of the following formula
in which
at least one of the R 1 , R 2 , R 3 and R 4 radicals is a substituent which is selected from Br, F and CN, and the remaining R 1 , R 2 , R 3 and R 4 radicals are each hydrogen,
Z 1 , Z 2 , Z 3 and Z 4 are each O,
R a and R b are each independently hydrogen or unsubstituted or substituted alkyl, alkenyl, alkadienyl, alkynyl, cycloalkyl, bicycloalkyl, cycloalkenyl, heterocycloalkyl, aryl or heteroaryl,
or
one of the Z 1 or Z 2 radicals is NR c , and R a and R c together are a bridging group having 2 to 5 atoms between the flanking bonds, and/or one of the Z 3 or Z 4 radicals is NR d , and R b and R d together are a bridging group having from 2 to 5 atoms between the flanking bonds,
comprising:
a1) subjecting naphthalene-1,8;4,5-tetracarboxylic dianhydride to a bromination with N,N′-dibromoisocyanuric acid to obtain a compound of the general formula I.a
in which two or three or four of the R 1 , R 2 , R 3 and R 4 radicals are each Br, and the remaining R 1 , R 2 , R 3 and R 4 radicals are each hydrogen,
b1) subjecting the compound of the formula I.a obtained in a1) to a substitution of the bromine by fluorine or cyano groups, and optionally, partly by hydrogen, and
c1) subjecting the compound obtained in b1) to a reaction with an amine of the formula R a —NH 2 and, optionally, an amine of the formula R b —NH 2 ,
or
subjecting the compound obtained in b1) to a reaction with an amine of the formula H 2 N—X—NH 2 , where X is a divalent bridging group having from 2 to 5 atoms between the flanking bonds.
9. A process for preparing a compound of the following formula
in which
at least one of the R 1 , R 2 , R 3 and R 4 radicals is a substituent which is selected from Br, F and CN, and the R 1 , R 2 , R 3 and R 4 remaining radicals are each hydrogen,
Z 1 , Z 2 , Z 3 and Z 4 are each O,
R a and R b are each independently hydrogen or unsubstituted or substituted alkyl, alkenyl, alkadienyl, alkynyl, cycloalkyl, bicycloalkyl, cycloalkenyl, heterocycloalkyl, aryl or heteroaryl,
or
one of the Z 1 or Z 2 radicals is NR c , and R a and R c together are a bridging group having 2 to 5 atoms between the flanking bonds, and/or one of the Z 3 or Z 4 radicals is NR d , and R b and R d together are a bridging group having from 2 to 5 atoms between the flanking bonds,
comprising:
a2) subjecting naphthalene-1,8;4,5-tetracarboxylic dianhydride to a reaction with an amine of the formula R a —NH 2 and, optionally, an amine of the formula R b —NH 2 to obtain at least one compound of the general formula I.a21)
where R b may also be as defined for R a ,
or
subjecting naphthalene-1,8;4,5-tetracarboxylic dianhydride to a reaction with an amine of the formula H 2 N—X—NH 2 to obtain at least one compound of the general formula I.a22)
or an isomer thereof, where X is a divalent bridging group having from 2 to 5 atoms between the flanking bonds,
b2) subjecting the compound(s) obtained in a2) to a bromination with N,N′-dibromoisocyanuric acid, and
c2) optionally, subjecting the compound(s) obtained in b2) to a substitution of the bromine by fluorine or cyano groups, and also, if appropriate, partly by hydrogen.
10. A semiconductor comprising a compound of the general formula I
where
at least one of the R 1 , R 2 , R 3 and R 4 radicals is a substituent which is selected from Br, F and CN, and the remaining R 1 , R 2 , R 3 and R 4 radicals are each hydrogen,
Y 1 is NR a , where R a is hydrogen or unsubstituted or substituted alkyl, alkenyl, alkadienyl, alkynyl, cycloalkyl, bicycloalkyl, cycloalkenyl, heterocycloalkyl, aryl or heteroaryl,
Y 2 is NR b , where R b is hydrogen or unsubstituted or substituted alkyl, alkenyl, alkadienyl, alkynyl, cycloalkyl, bicycloalkyl, cycloalkenyl, heterocycloalkyl, aryl or heteroaryl,
Z 1 and Z 2 are each O, and
Z 3 and Z 4 are each O,
wherein one of the following conditions applies:
R 1 and R 2 are each independently selected from fluorine and cyano, and R 3 and R 4 are each hydrogen;
R 1 and R 3 are each independently selected from fluorine and cyano, and R 2 and R 4 are each hydrogen; or
R 1 and R 4 are each independently selected from fluorine and cyano, and R 2 and R 3 are each hydrogen.
11. The process according to claim 3 , wherein the alkali metal fluoride is KF.
12. The process according to claim 5 , wherein the solvent is selected from the group consisting of dimethylformamide, N-methylpyrrolidone, (CH 3 ) 2 SO, dimethyl sulfone, sulfolane, and mixtures thereof.
13. The process according to claim 6 , wherein the complexing agent is a crown ether.
14. The semiconductor according to claim 10 , wherein R 1 and R 2 are each independently selected from fluorine and cyano, and R 3 and R 4 are each hydrogen.
15. The semiconductor according to claim 10 , wherein R 1 and R 3 are each independently selected from fluorine and cyano, and R 2 and R 4 are each hydrogen.
16. The semiconductor according to claim 10 , wherein R 1 and R 4 are each independently selected from fluorine and cyano, and R 2 and R 3 are each hydrogen.
17. A semiconductor comprising a compound of the general formula I
where
at least one of the R 1 , R 2 , R 3 and R 4 radicals is a substituent which is selected from Br, F and CN, and the remaining R 1 , R 2 , R 3 and R 4 radicals are each hydrogen,
Y 1 is NR a , where R a is hydrogen or an organyl radical,
Y 2 is NR b , where R b is hydrogen or an organyl radical,
Z 1 and Z 2 are each independently O or NR c , where R c is an organyl radical,
Z 3 and Z 4 are each independently O or NR d , where R d is an organyl radical,
where, in the case that Y 1 is NR a and at least one of the Z 1 and Z 2 radicals is NR c , R a with one R c radical may also together be a bridging group having 2 to 5 atoms between the flanking bonds, and
where, in the case that Y 2 is NR b and at least one of the Z 3 and Z 4 radicals is NR d , R b with one R d radical may also together be a bridging group having 2 to 5 atoms between the flanking bonds, and
provided that one of the following three conditions apply:
R 1 and R 2 are each independently selected from fluorine and cyano, and R 3 and R 4 are each hydrogen; or
R 1 and R 3 are each independently selected from fluorine and cyano, and R 2 and R 4 are each hydrogen; or
R 1 and R 4 are each independently selected from fluorine and cyano, and R 2 and R 3 are each hydrogen.
18. The semiconductor according to claim 17 , wherein R 1 and R 2 are each independently selected from fluorine and cyano, and R 3 and R 4 are each hydrogen.
19. The semiconductor according to claim 17 , wherein R 1 and R 3 are each independently selected from fluorine and cyano, and R 2 and R 4 are each hydrogen.
20. The semiconductor according to claim 17 , wherein R 1 and R 4 are each independently selected from fluorine and cyano, and R 2 and R 3 are each hydrogen.