Thick Film Conductor Formulations Comprising Silver And Nickel Or Silver And Nickel Alloys And Solar Cells Made Therefrom
Formulations and methods of making solar cells and solar cell contacts are disclosed. In general, the invention presents a solar cell contact made from a mixture wherein the mixture comprises a metal portion, which, prior to firing, comprises nickel and silver.
1 . A thick film paste comprising a glass portion and a conductive metal portion, said conductive metal portion comprising:
a. from about 10 to about 99 wt % silver and
b. from about 1 to about 90 wt % of a nickel alloy selected from the group consisting of a nickel-aluminum alloy, a nickel-chromium alloy, and a nickel-aluminum-chromium alloy, and combinations thereof.
2 . The thick film paste of claim 1 wherein the nickel alloy comprises about 1 to about 25 wt % aluminum, about 0 to about 30 wt % chromium, and nickel.
3 . The thick film paste of claim 1 , wherein the nickel alloy is a nickel-chromium alloy, said nickel-chromium alloy comprising about 1 to about 60 wt % chromium.
4 . The thick film paste of claim 2 , wherein said nickel alloy further includes an element selected from the group consisting of cobalt, iron, silicon, molybdenum, manganese, and combinations thereof.
5 . The thick film paste of claim 2 , wherein said nickel alloy further comprises an element selected from the group consisting of vanadium, antimony, tantalum, niobium, and combinations thereof.
6 . The thick film paste of claim 1 , wherein the nickel alloy is a nickel-aluminum alloy, said nickel-aluminum alloy comprising about 75 to about 99 wt % nickel and about 1 to about 25 wt % aluminum.
7 . The thick film paste of claim 1 , wherein the conductive metal portion comprises:
a. from about 20 to about 90 wt % silver, and
b. from about 10 to about 80 wt % of a nickel alloy selected from the group consisting of a nickel-aluminum alloy, a nickel-chromium alloy, and a nickel-aluminum-chromium alloy, and combinations thereof.
8 . The thick film paste of claim 1 , wherein the conductive metal portion comprises
a. about 37.5 to about 75 wt % silver and
b. about 25 to about 62.5 wt % of a nickel alloy.
9 . The thick film paste of claim 1 , wherein the conductive metal portion comprises
a. about 13.8 to about 87.5 wt % silver and
b. about 12.5 to about 86.2 wt % of a nickel alloy selected from the group consisting of nickel-aluminum, nickel chromium, nickel-aluminum-chromium, and combinations thereof
10 . The thick film paste of claim 9 , wherein the nickel alloy is a nickel-aluminum alloy, said nickel-aluminum alloy comprising about 1 to about 20 wt % aluminum and about 80 to about 99 wt % nickel.
11 . A thick film paste comprising: a glass portion and a conductive metal portion, said conductive metal portion comprising:
a. from about 10 to about 99 wt % silver and
b. from about 1 to about 90 wt % of a nickel alloy selected from the group consisting of a nickel-aluminum alloy, a nickel-chromium alloy, and a nickel-aluminum-chromium alloy, and combinations thereof, said glass portion comprising a partially crystallizing glass.
12 . A thick film paste comprising:
a. a glass portion including frit particles having a particle size no greater than about 2 microns, the glass portion including at least one partially crystallizing glass fit, and
b. a conductive metal portion comprising
i. from about from about 10 to about 99 wt % silver and
ii. from about 0.05 to about 90 wt % of a nickel alloy selected from the group consisting of a nickel-aluminum alloy, a nickel-chromium alloy, and a nickel-aluminum-chromium alloy, and combinations thereof.
13 . A solar cell including a front contact, said front contact formed by firing a paste composition comprising a glass portion and a conductive metal portion, said conductive metal portion comprising silver and at least about 1 wt % nickel.
14 . The solar cell of claim 13 , wherein said conductive metal portion includes an alloy of nickel.
15 . The solar cell of claim 13 , wherein said conductive metal portion comprises from about 10 to about 99 wt % silver, and from about 2 to about 90 wt % nickel.
16 . The solar cell of claim 13 , wherein said conductive metal portion further comprises an element selected from the group consisting of cobalt, iron, silicon, manganese, manganese, yttrium, and combinations thereof.
17 . The solar cell of claim 13 , wherein said nickel alloy further comprises an element selected from the group consisting of vanadium, antimony, tantalum, niobium, and combinations thereof.
18 . The solar cell of claim 13 , wherein said conductive metal portion comprises about 20 to about 80 wt % silver and about 20 to about 80 wt % of a nickel alloy selected from the group consisting of nickel-aluminum, nickel-chromium, nickel-aluminum-chromium, and combinations thereof.
19 . The solar cell of claim 18 , wherein said nickel alloy is a nickel-aluminum alloy, said nickel-aluminum alloy comprising about 80 to about 99 wt % nickel and about 1 to about 20 wt % aluminum.
20 . The solar cell of claim 13 wherein the conductive metal portion comprises silver and at least about 8 wt % nickel.
21 . The solar cell of claim 18 , wherein the nickel alloy is a nickel-chromium alloy, said nickel chromium alloy comprising about 48 to about 81 wt % nickel and about 19 to about 52 wt % chromium.
22 . A process for making a solar cell contact, comprising
a. applying a paste to a silicon wafer, wherein the paste comprises
i. a glass portion and
ii. a conductive metal portion, said conductive metal portion comprising:
1. from about 10 to about 99 wt % silver and
2. from about 1 to about 90 wt % of a nickel alloy selected from the group consisting of a nickel-aluminum alloy, a nickel-chromium alloy, and a nickel-aluminum-chromium alloy, and combinations thereof, and
b. firing the silicon wafer at a time and temperature sufficient to sinter the metal portion and fuse the glass portion.
23 . The process of claim 22 wherein the glass portion includes a partially crystallizing glass.
24 . The process of claim 22 wherein the glass portion includes, prior to firing, frit particles having an average size of no greater than about 2 microns.
25 . A process for making a solar cell contact, comprising
a. applying a paste to a silicon wafer, wherein the paste comprises
i. a glass portion and
ii. a conductive metal portion, said conductive metal portion comprising
1. silver and
2. at least about 1 wt % nickel,
b. firing the silicon wafer at a time and temperature sufficient to sinter the metal portion and fuse the glass portion.
26 . The process of claim 25 , wherein said conductive metal portion includes an alloy of nickel.
27 . The process of claim 26 , wherein said conductive metal portion comprises from about 10 to about 99 wt % silver, and from about 2 to about 90 wt % nickel.