Mask for manufacturing TFT, TFT, and manufacturing thereof
A mask comprises a channel region half-exposure mask structure, a drain mask structure, and a source mask structure, wherein the channel region half-exposure mask structure comprises a channel region peripheral half-exposure mask structure, which extends from a portion that corresponds to a channel region of the TFT and is outside the portion. According to the present invention, problems such as a connection of the source/drain and a disconnection of the active layer in the channel region can be effectively prevented.
1. A mask for manufacturing a thin film transistor (TFT), comprising:
a channel region half-exposure mask structure, a drain mask structure, and a source mask structure,
wherein the channel region half-exposure mask structure comprises a channel region peripheral half-exposure mask structure, which extends from a portion that corresponds to a channel region of the TFT and is outside the portion,
wherein a width of the channel region peripheral half-exposure mask structure, along a direction perpendicular to the channel region, decreases with a distance away from the channel region, and
wherein the channel region peripheral half-exposure mask structure is a leaf-like structure as a whole.
2. The mask according to claim 1 , wherein the channel region peripheral half-exposure mask structure is in a shape selected from the group consisting of a grid shape, a mesh shape, and a pore shape.
3. The mask according to claim 1 , wherein the leaf-like structure has a portion in a grid shape.
4. The mask according to claim 1 , wherein the leaf-like structure has a portion in a mesh shape.
5. The mask according to claim 1 , wherein the leaf-like structure has a portion in a pore shape.
6. The mask according to claim 1 , wherein the channel region half-exposure mask structure, the drain mask structure, the source mask structure, and the channel region peripheral half-exposure mask structure are made of chromium.
7. A method of manufacturing a thin film transistor (TFT) which comprises a channel region and a channel region peripheral extension portion, wherein, after forming sequentially an active layer and a drain/source metal layer on a substrate, the channel region and the channel region peripheral extension portion of the TFT are formed by the steps of:
patterning a photoresist applied on the source/drain metal layer with the half-exposure mask according to claim 1 to form a photoresist pattern;
patterning the source/drain metal layer and the active layer with the photoresist pattern as an etching mask; and
thinning the photoresist pattern to expose the source/drain metal layer in the channel region and the channel region peripheral extension portion, and removing the source/drain metal layer in the channel region and the channel region peripheral extension portion with the remaining photoresist pattern as an etching mask to expose the active layer therein in the active layer;
wherein a width of the channel region peripheral half-exposure mask structure, along a direction perpendicular to the channel region, decreases with a distance away from the channel region, and
wherein the channel region peripheral half-exposure mask structure is a leaf-like structure as a whole.