Organic light emitting element and method of manufacturing the same
View Patent ↗An organic light emitting element includes an organic light emitting diode formed on a substrate, coupled to a transistor including a gate, a source and a drain and including a first electrode, an organic thin film layer and a second electrode; a photo diode formed on the substrate and having a semiconductor layer including a high-concentration P doping region, a low-concentration P doping region, an intrinsic region and a high-concentration N doping region; and a controller that controls luminance of light emitted from the organic light emitting diode, to a constant level by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photo diode.
1. An organic light emitting element, comprising:
an organic light emitting diode;
a photo diode comprising at least one semiconductor layer, each semiconductor layer comprising an intrinsic region, a high-concentration P doping region and a low-concentration P doping region disposed on a first side of the intrinsic region, and a high-concentration N doping region disposed on an opposing second side of the intrinsic region, such that the photodiode has an asymmetrical PIN (P doping region, intrinsic region, and N doping region) structure, with respect to the center of the intrinsic region; and
a controller that controls a luminance of light emitted from the organic light emitting diode to a constant level by controlling a voltage applied to the organic light emitting diode according to a voltage outputted from the photo diode.
2. The organic light emitting element according to claim 1 , wherein the organic light emitting diode includes a first electrode, an organic thin film layer and a second electrode.
3. The organic light emitting element according to claim 1 , wherein the organic light emitting diode is coupled to a transistor including a gate, a source and a drain.
4. The organic light emitting element according to claim 1 , wherein the low-concentration P doping region of the photo diode is disposed between the high-concentration P doping region and the intrinsic region, such that a point where electron-hole pairs are generated in response to light is moved toward the low-concentration P doping region, and the average life time of holes generated is extended, in comparison to a photo diode having a symmetrical PIN structure.
5. The organic light emitting element according to claim 1 , further comprising a reflective film positioned in a non-light emission region to reflect light incident from outside the organic light emitting element to the photo diode.
6. The organic light emitting element according to claim 1 , further comprising a reflective film positioned to reflect light generated inside the organic light emitting element to the photo diode.
7. The organic light emitting element according to claim 5 ,
wherein the reflective film is formed of at least one metal selected from the group consisting of Ag, Mo, Ti, Al and Ni.
8. The organic light emitting element according to claim 5 ,
wherein the reflective film has a thickness of 100 to 5,000 Å.
9. The organic light emitting element according to claim 1 ,
wherein the photo diode includes a plurality of the semiconductor layers coupled in parallel to each other, each of the semiconductor layers comprising the high-concentration P doping region, the low-concentration P doping region, the intrinsic region, and the high-concentration N doping region.