Method of manufacturing a semiconductor device
View Patent ↗Disclosed is a means for stabilizing quality of a semiconductor device by preventing projections from being formed in the bottom of a through hole. A method of manufacturing a semiconductor device includes a process of forming a through hole reaching a metal nitride layer through an interlayer insulating layer on a semiconductor wafer on which the wiring layer, the metal nitride layer formed on the wiring layer, and the interlayer insulating layer covering the wiring layer and the metal nitride layer are formed. The through hole forming process includes: a first etching step of etching the interlayer insulating layer by an anisotropic etching method with the semiconductor wafer set to a first temperature; and a second etching step of etching an upper surface of metal nitride layer by an anisotropic etching method with the semiconductor wafer set to a second temperature higher than the first temperature.
1. A method of manufacturing a semiconductor device comprising:
forming a hole through an insulating layer to expose a conductive barrier layer at least partially covering a wiring layer formed over a semiconductor wafer, wherein the formation of the hole includes:
a first etching step comprising anisotropic etching of the insulating layer at a first temperature; and
a second etching step comprising anisotropic etching of an upper surface of the conductive barrier layer at a second temperature higher than the first temperature.
2. The method according to claim 1 ,
wherein the first etching step exposes the upper surface of the conductive barrier layer.
3. The method according to claim 1 ,
wherein the conductive barrier layer comprises titanium nitride.
4. The method according to claim 2 ,
wherein the conductive barrier layer comprises titanium nitride.
5. The method according to claim 1 ,
wherein the first temperature is set by setting a temperature of a heating plate in thermal communication with the semiconductor wafer to be less than 40° C.; and
wherein the second temperature is set by setting the temperature of the heating plate to be more than 50° C.
6. The method according to claim 2 ,
wherein the first temperature is set by setting a temperature of a heating plate in thermal communication with the semiconductor wafer to be less than 40° C.; and
wherein the second temperature is set by setting the temperature of the heating plate to be more than 50° C.
7. The method according to claim 3 ,
wherein the first temperature is set by setting a temperature of a heating plate in thermal communication with the semiconductor wafer to be less than 40° C.; and
wherein the second temperature is set by setting the temperature of the heating plate to be more than 50° C.
8. The method according to claim 1 ,
wherein the first etching step includes setting an erupting pressure of an inert gas to cool an outer circumference of the semiconductor wafer to be at least 40 Torr; and
wherein the second etching step includes setting the erupting pressure of the inert gas at no more than 30 Torr.
9. The method according to claim 2 ,
wherein the first etching step includes setting an erupting pressure of an inert gas to cool an outer circumference of the semiconductor wafer to be at least 40 Torr; and
wherein the second etching step includes setting the erupting pressure of the inert gas at no more than 30 Torr.
10. The method according to claim 3 ,
wherein the first etching step includes setting an erupting pressure of an inert gas to cool an outer circumference of the semiconductor wafer to be at least 40 Torr; and
wherein the second etching step includes setting the erupting pressure of the inert gas at no more than 30 Torr.
11. The method according to claim 5 ,
wherein the first etching step includes setting an erupting pressure of an inert gas to cool an outer circumference of the semiconductor wafer to be at least 40 Torr; and
wherein the second etching step includes setting the erupting pressure of the inert gas at no more than 30 Torr.