Chemical-Mechanical Polishing Compositions Containing Aspartame And Methods Of Making And Using The Same
The present invention provides an aqueous CMP slurry composition that comprises abrasive particles and Aspartame. The CMP slurry composition according to the invention is selective for polishing silicon dioxide in preference to silicon nitride from a surface of an article by chemical mechanical planarization. Furthermore, as more Aspartame is added to the slurry, the silicon dioxide rate is either not greatly affected or increases and the silicon nitride rate stays extremely low. In addition to offering selectivity of silicon dioxide to silicon nitride polishing, the present invention provides a method of using Aspartame as a polish accelerant in silicon dioxide polishing.
1 . An aqueous CMP slurry composition comprising abrasive particles and Aspartame.
2 . The aqueous CMP slurry composition according to claim 1 wherein the CMP slurry composition comprises from about 0.005% to about 1.5% Aspartame by weight.
3 . The aqueous CMP slurry composition according to claim 1 wherein the CMP slurry composition comprises from about 0.1% to about 1.0% Aspartame by weight.
4 . The aqueous CMP slurry composition according to claim 1 wherein the aqueous CMP slurry composition has a pH of from about 3 to about 11.
5 . The aqueous CMP slurry composition according to claim 1 wherein the aqueous CMP slurry composition has a pH of from about 3.5 to 8.0.
6 . The aqueous CMP slurry composition according to claim 1 wherein the abrasive particles comprise ceria.
7 . The aqueous CMP slurry composition according to claim 6 wherein the ceria abrasive particles have a mean diameter of from about 20 nm to about 1000 nm.
8 . The aqueous CMP slurry composition according to claim 7 wherein the ceria abrasive particles have a maximum diameter of less than about 10,000 nm.
9 . The aqueous CMP slurry composition according to claim 6 wherein the ceria abrasive particles have a mean diameter of from about 100 nm to about 150 nm.
10 . The aqueous CMP slurry composition according to claim 1 wherein the abrasive particles are dispersed in water prior to polishing.
11 . The aqueous CMP slurry composition according to claim 1 wherein the abrasive particles are initially bonded to a polishing pad and become dispersed in water during polishing.
12 . The aqueous CMP slurry composition according to claim 1 wherein the abrasive particles are present in the CMP slurry composition in an amount of from about 0.05% to about 8% by weight of the CMP slurry composition.
13 . The aqueous CMP slurry composition according to claim 1 wherein the abrasive particles are present in the CMP slurry composition in an amount of from about 0.5% to about 6% by weight of the CMP slurry composition.
14 . The aqueous CMP slurry composition according to claim 1 wherein the abrasive particles are present in the CMP slurry composition in an amount of from about 1% to about 4% by weight of the CMP slurry composition.
15 . The aqueous CMP slurry composition according to claim 1 wherein the abrasive particles are selected from the group consisting of ceria, alumina, silica, copper oxide, iron oxide, nickel oxide, manganese oxide, silicon carbide, silicon nitride, tin oxide, titania, titanium carbide, tungsten oxide, yttria, zirconia, and combinations thereof.
16 . A method for removing at least a portion of a surface material from a workpiece by chemical mechanical polishing, the method comprising:
providing an aqueous CMP slurry composition between a polishing pad and the workpiece, the aqueous CMP slurry composition comprising abrasive particles and Aspartame; and
pressing the polishing pad and the workpiece together with the CMP slurry composition disposed therebetween while the polishing pad and the workpiece are moving relative to each other to remove the surface material.
17 . The method according to claim 16 wherein the abrasive particles are selected from the group consisting of ceria, alumina, silica, copper oxide, iron oxide, nickel oxide, manganese oxide, silicon carbide, silicon nitride, tin oxide, titania, titanium carbide, tungsten oxide, yttria, zirconia, and combinations thereof.
18 . The method according to claim 16 wherein the surface material comprises silicon dioxide.
19 . A method for removing silicon dioxide from a surface of a workpiece, the method comprising:
providing an aqueous CMP slurry composition between a polishing pad and the surface of the workpiece, the aqueous CMP slurry composition comprising abrasive particles and Aspartame; and
pressing the polishing pad and the surface of the workpiece together with the CMP slurry composition disposed therebetween while the polishing pad and the surface of the workpiece are moving relative to each other.
20 . The method according to claim 19 wherein silicon dioxide is removed from the surface of the workpiece at a rate that is at least five times greater than a rate at which silicon nitride is removed from the surface of the workpiece.
21 . The method according to claim 19 wherein the presence of the Aspartame in the CMP slurry composition increases a step height removal rate for silicon dioxide as compared to that which would have been obtained if the Aspartame was not included in the CMP slurry composition.
22 . The method according to claim 19 wherein the silicon dioxide is removed in an inner layer dielectric (ILD) polishing process.
23 . The method according to claim 19 wherein the silicon dioxide is removed in a bulk-oxide-removal polishing step during fabrication of a shallow trench isolation structure.