Protection layer for fabricating a solar cell
View Patent ↗A method for fabricating a solar cell is described. The method includes first providing, in a process chamber, a substrate having a light-receiving surface. An anti-reflective coating (ARC) layer is then formed, in the process chamber, above the light-receiving surface of the substrate. Finally, without removing the substrate from the process chamber, a protection layer is formed above the ARC layer.
1. A method for fabricating a solar cell, comprising:
providing, in a process chamber, a substrate having a light-receiving surface;
forming, in the process chamber, an anti-reflective coating (ARC) layer above the light-receiving surface of the substrate; and, without removing the substrate from the process chamber,
forming a protection layer above the ARC layer; and, subsequently,
removing the protection layer to re-expose the ARC layer.
2. The method of claim 1 , wherein the protection layer comprises amorphous carbon.
3. The method of claim 2 , wherein the protection layer is formed by vapor deposition using a gas selected from the group consisting of methane (CH 4 ), ethane (C 2 H 6 ), propane (C 3 H 8 ), ethylene (C 2 H 4 ), propylene (C 3 H 6 ), and liquid toluene (C 7 H 8 ) transported by a carrier gas selected from the group consisting of argon (Ar), nitrogen (N 2 ), helium (He) and hydrogen (H 2 ).
4. The method of claim 1 , wherein the protection layer comprises amorphous silicon.
5. The method of claim 4 , wherein the protection layer is formed by vapor deposition using silane (SiH 4 ) gas.
6. The method of claim 1 , wherein the protection layer is formed to a thickness approximately in the range of 1-30 nanometers.
7. The method of claim 1 , wherein both the ARC layer and the protection layer are formed by a technique selected from the group consisting of chemical vapor deposition, plasma-enhanced chemical vapor deposition, atmospheric-pressure chemical vapor deposition and physical vapor deposition.
8. The method of claim 1 , wherein the protection layer is resistant to a buffered oxide etch (BOE).
9. A method for fabricating a solar cell, comprising:
providing a substrate having a light-receiving surface and a second surface with a plurality of active regions;
forming, in a process chamber, an anti-reflective coating (ARC) layer above the light- receiving surface of the substrate; and, without removing the substrate from the process chamber,
forming a protection layer above the ARC layer;
forming, using a buffered oxide etch (BOE), a plurality of contact openings to the plurality of active regions at the second surface of the substrate, wherein the protection layer protects the ARC layer during the forming of the plurality of contact openings;
removing the protection layer; and
forming a plurality of contacts in the plurality of contact openings.
10. The method of claim 9 , wherein the protection layer comprises amorphous carbon.
11. The method of claim 10 , wherein the protection layer is formed by vapor deposition using a gas selected from the group consisting of methane (CH 4 ), ethane (C 2 H 6 ), propane (C 3 H 8 ), ethylene (C 2 H 4 ), propylene (C 3 H 6 ), and liquid toluene (C 7 H 8 ) transported by a carrier gas selected from the group consisting of argon (Ar), nitrogen (N 2 ), helium (He) and hydrogen (H 2 ).
12. The method of claim 9 , wherein the protection layer comprises amorphous silicon.
13. The method of claim 12 , wherein the protection layer is formed by vapor deposition using silane (SiH 4 ) gas.
14. The method of claim 9 , wherein the protection layer is formed to a thickness approximately in the range of 1-30 nanometers.
15. The method of claim 9 , wherein both the ARC layer and the protection layer are formed by a technique selected from the group consisting of chemical vapor deposition, plasma-enhanced chemical vapor deposition, atmospheric-pressure chemical vapor deposition and physical vapor deposition.
16. A method for fabricating a solar cell, comprising:
providing, in a process chamber, a substrate having a light-receiving surface;
flowing, in the process chamber, at least a first process gas and a second process gas to form an anti-reflective coating (ARC) layer above the light-receiving surface of the substrate; and, without removing the substrate from the process chamber,
flowing, in the process chamber, at least the first process gas, but not the second process gas, to form a protection layer above the ARC layer; and, subsequently,
removing the protection layer to re-expose the ARC layer.
17. The method of claim 16 , wherein the protection layer comprises amorphous silicon, and wherein the ARC layer comprises a material selected from the group consisting of silicon nitride, silicon oxy-nitride and carbon-doped silicon oxide.
18. The method of claim 17 , wherein the first process gas is silane (SiH 4 ) and the second process gas is ammonia (NH 3 ).
19. The method of claim 16 , wherein the protection layer is formed to a thickness approximately in the range of 1-30 nanometers.
20. The method of claim 16 , wherein both the ARC layer and the protection layer are formed by a technique selected from the group consisting of chemical vapor deposition, plasma-enhanced chemical vapor deposition, atmospheric-pressure chemical vapor deposition and physical vapor deposition.