Atomic Layer Deposition Methods
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.
1 - 49 . (canceled)
50 . A method of atomic layer deposition comprising:
alternately introducing a first precursor gas and a second precursor gas into a reaction chamber to form layers on a substrate, wherein the first precursor gas and the second precursor gas differ relative to each other;
forming a residue within the reaction chamber during the introducing the first precursor gas and the second precursor gas;
interrupting the alternately introducing the first precursor gas and the second precursor gas to purge the reaction chamber with a third gas which removes at least a portion of the residue from the chamber; and
resuming the alternately introducing of the first precursor gas and second precursor gas.
51 . The method of claim 50 wherein the third gas comprises at least one member of the group consisting of O 2 , H 2 and Cl 2 .
52 . The method of claim 50 wherein the first precursor gas forms a first mono-layer on the substrate and wherein the second precursor gas forms a second mono-layer on the substrate.
53 . The method of claim 50 wherein the first precursor gas is TiCl 4 and the second precursor gas is NH 3 .
54 . The method of claim 50 wherein the first precursor gas is trimethylaluminum and the second precursor gas is ozone.
55 . The method of claim 50 wherein an inert gas flow is interposed between introducing the first precursor gas introducing the second precursor gas.
56 . The method of claim 50 wherein an inert gas flow is interposed between the alternately introducing precursor gases and the purging the reaction chamber with the third gas.