Mask layout method, and semiconductor device and method for fabricating the same
View Patent ↗Provided are a mask layout method and a semiconductor device and a method for fabricating the same. The semiconductor device can include a main pattern, a first dummy pattern, and a second dummy pattern. The main pattern can be disposed on a substrate. The first dummy pattern and the second dummy pattern can be disposed around a side of the main pattern. The first dummy pattern can have an inner open region. The second dummy pattern can be disposed on the inner open region of the first dummy pattern, such that the first dummy pattern surrounds the second dummy pattern.
1. A mask layout method, comprising:
forming a first dummy pattern including an open space therein; and
forming a second dummy pattern in the open space of the first dummy pattern, wherein forming the second dummy pattern comprises:
shrinking a third parent dummy pattern; and
disposing the shrunken third parent dummy pattern in the open space of the first dummy pattern.
2. The mask layout method according to claim 1 , wherein the forming of the first dummy pattern comprises:
forming a first parent dummy pattern;
shrinking a second parent dummy pattern to form a third dummy pattern; and
synthesizing the third dummy pattern and the first parent dummy pattern to remove a portion in which the first parent dummy pattern overlaps the third dummy pattern, thereby forming the first dummy pattern.
3. The mask layout method according to claim 1 , wherein shrinking the third parent dummy pattern comprises shrinking the third parent dummy pattern to form another third dummy pattern and then shrinking the another third dummy pattern to form the second dummy pattern.
4. The mask layout method according to claim 1 , further comprising replacing the shrunken third parent dummy pattern with a pattern type different from that of the first dummy pattern.
5. The mask layout method according to claim 4 , wherein the replacing of the shrunken third parent dummy pattern with the pattern type different from that of the first dummy pattern is performed after the disposing of the shrunken third parent dummy pattern in the open space of the first dummy pattern.
6. The mask layout method according to claim 4 , wherein the replacing of the shrunken third parent dummy pattern with the pattern type different from that of the first dummy pattern is performed before the disposing of the shrunken third parent dummy pattern in the open space of the first dummy pattern.
7. The mask layout method according to claim 4 , wherein the pattern type of the first dummy pattern is an active layer type dummy pattern, and the pattern type of the second dummy pattern is a poly type dummy pattern.
8. The mask layout method according to claim 1 , wherein the first dummy pattern has a ring shape.