IP Library Granted Patent US 7,990,683
Granted Patent B2
US 7,990,683 · App. 12/116,614 · Granted Aug 2, 2011

High voltage solid electrolytic capacitors using conductive polymer slurries

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Quick Facts
Patent No.
US 7,990,683
App. No.
12/116,614
Granted
Aug 2, 2011
Kind
B2
Abstract

A method for forming a capacitor including forming an anode from a valve metal; forming an oxide on the anode to form an anodized anode; dipping the anodized anode into a slurry of conductive polymer; drying the intrinsically conductive polymer; and providing external terminations in electrical contact with the anode and the conductive polymer.

Claims (57)

1. A capacitor formed by the method of:

forming an anode from a valve metal;

forming a dielectric layer on said anode to form a dielectric coated anode;

coating said dielectric coated anode with a slurry of intrinsically conductive polymer;

drying said intrinsically conductive polymer;

providing terminations in electrical contact with said anode and said intrinsically conductive polymer; and wherein said capacitor has a breakdown voltage of at least 60V wherein said capacitor has a breakdown voltage to formation voltage ratio of at least 0.46.

2. The capacitor of claim 1 wherein said capacitor has a breakdown voltage to formation voltage ratio of at least 0.54.

3. A capacitor formed by the method of:

forming an anode from a valve metal;

forming a dielectric layer on said anode to form a dielectric coated anode;

coating said dielectric coated anode with a slurry of intrinsically conductive polymer;

drying said intrinsically conductive polymer;

providing terminations in electrical contact with said anode and said intrinsically conductive polymer; and wherein said capacitor has a breakdown voltage of at least 60V wherein said capacitor has an anode with a volumetric efficiency of at least 555 μF/cc.

4. The capacitor of claim 3 wherein said capacitor has an anode wherein the product of volumetric efficiency and break down voltage is at least 33,300 V·μF/cc.

5. A capacitor formed by the method of:

forming an anode from a valve metal;

forming a dielectric layer on said anode to form a dielectric coated anode;

coating said dielectric coated anode with a slurry of intrinsically conductive polymer;

drying said intrinsically conductive polymer;

providing terminations in electrical contact with said anode and said intrinsically conductive polymer;

prior to said dipping processing said dielectric coated anode in at least one in-situ polymerization cycle wherein said capacitor has a breakdown voltage of at least 60V wherein said capacitor has a breakdown voltage to formation voltage ratio of at least 0.46.

6. A capacitor formed by the method of:

forming an anode from a valve metal;

forming a dielectric layer on said anode to form a dielectric coated anode;

coating said dielectric coated anode with a slurry of intrinsically conductive polymer;

drying said intrinsically conductive polymer;

providing terminations in electrical contact with said anode and said intrinsically conductive polymer;

prior to said dipping processing said dielectric coated anode in at least one in-situ polymerization cycle wherein said capacitor has a breakdown voltage of at least 60V wherein said capacitor has a breakdown voltage to formation voltage ratio of at least 0.54.

7. A capacitor formed by the method of:

forming an anode from a valve metal;

forming a dielectric layer on said anode to form a dielectric coated anode;

coating said dielectric coated anode with a slurry of intrinsically conductive polymer;

drying said intrinsically conductive polymer;

providing terminations in electrical contact with said anode and said intrinsically conductive polymer;

prior to said dipping processing said dielectric coated anode in at least one in-situ polymerization cycle wherein said capacitor has a breakdown voltage of at least 60V wherein said capacitor has an anode with a volumetric efficiency of at least 555 μF/cc.

8. The capacitor of claim 7 wherein said capacitor has an anode wherein the product of volumetric efficiency and break down voltage is at least 33,300 V·μF/cc.

9. A capacitor formed by the method of:

forming an anode from a valve metal;

forming a dielectric layer on said anode to form a dielectric coated anode;

coating said dielectric coated anode with a slurry of intrinsically conductive polymer;

drying said intrinsically conductive polymer; and

providing terminations in electrical contact with said anode and said intrinsically conductive polymer wherein said capacitor has a breakdown voltage from 60V to 120V wherein said capacitor has a breakdown voltage to formation voltage ratio of at least 0.46.

10. The capacitor of claim 9 wherein said capacitor has a breakdown voltage to formation voltage ratio of at least 0.54.

11. A capacitor formed by the method of:

forming an anode from a valve metal;

forming a dielectric layer on said anode to form a dielectric coated anode;

coating said dielectric coated anode with a slurry of intrinsically conductive polymer;

drying said intrinsically conductive polymer; and

providing terminations in electrical contact with said anode and said intrinsically conductive polymer wherein said capacitor has a breakdown voltage from 60V to 120V wherein said capacitor has an anode with a volumetric efficiency of at least 555 μF/cc.

12. The capacitor of claim 11 wherein said capacitor has an anode wherein the product of volumetric efficiency and break down voltage is at least 33,300 V·μF/cc.

13. A capacitor formed by the method of:

forming an anode from a valve metal selected from tantalum and niobium;

forming a dielectric layer on said anode to form a dielectric coated anode;

dipping said dielectric coated anode into a slurry of intrinsically conductive polymer;

drying said intrinsically conductive polymer;

providing terminations in electrical contact with said anode and said intrinsically conductive polymer; and wherein said capacitor has a breakdown voltage of at least 60V, and a breakdown voltage to formation voltage ratio of at least 0.46 and said anode has a product of volumetric efficiency and break down voltage which is at least 33,300 V·μF/cc.

14. The capacitor of claim 13 wherein said breakdown voltage to formation voltage ratio is at least 0.54.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 8, 2018
From: BANK OF AMERICA, N.A.
To: KEMET CORPORATION,; KEMET ELECTRONICS CORPORATION; KEMET BLUE POWDER CORPORATION
Reel/Frame 047450/0926 →
SECURITY AGREEMENT Recorded May 22, 2017
From: KEMET CORPORATION; KEMET ELECTRONICS CORPORATION; KEMET BLUE POWDER CORPORATION
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 042523/0639 →
SECURITY AGREEMENT Recorded Mar 19, 2013
From: KEMET ELECTRONICS CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 030055/0049 →
SECURITY INTEREST Recorded Oct 5, 2010
From: KEMET ELECTRONICS CORPORATION
To: BANK OF AMERICA, N.A. AS AGENT
Reel/Frame 025150/0023 →
RELEASE OF SECURITY INTEREST RECORDED AT REEL/FRAME 022892/0795 Recorded May 18, 2010
From: K FINANCING, LLC
To: KEMET CORPORATION
Reel/Frame 024397/0774 →
SECURITY AGREEMENT Recorded Jul 1, 2009
From: KEMET CORPORATION
To: K FINANCING, LLC
Reel/Frame 022892/0795 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 7, 2008
From: QIU, YONGJIAN; HAHN, RANDY S
To: KEMET ELECTRONCIS CORPORATION
Reel/Frame 020914/0302 →