Forward voltage short-pulse technique for measuring high power laser array junction temperture
View Patent ↗The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.
1. A system for determining a junction temperature of a quasi-continuous-wave or pulsed semiconductor laser diode, the system comprising:
a high current source configured to provide high current drive pulses having an amperage selected to cause the laser diode to lase;
a low current source connected in parallel with the high current source and configured to provide a series of low current monitor pulses between the pulses of the high current drive pulses, each of the low current monitor pulses having an amperage selected to not cause the laser diode to lase;
a voltage measuring device configured to measure the voltage across the laser diode during provision of the low current monitor pulses; and
a processing element configured to calculate the junction temperature of the laser diode based on the measured voltage.
2. The system of claim 1 , further comprising:
a delay generator configured to delay a start of the low current monitor pulses for a predetermined time after each pulse of the high current drive pulses.
3. The system of claim 1 , wherein the processing element is further configured to adjust a laser diode thermal management system based on the calculated junction temperature.
4. The system of claim 1 , wherein the processing element is further configured to determine if the junction temperature exceeds a predetermined maximum temperature and to cause the high current driver to decrease power, pulsewidth, or frequency of the high current drive pulses in order to achieve a desired decrease in the junction temperature.
5. The system of claim 1 , wherein the processing element calculates the junction temperature of the laser diode using equation I=I 0 (exp(qV/nkT)−1) in which I is the pulsed low current, I 0 is a saturation current of the laser diode, q is an electrical charge of an electron, V is the measured voltage, n is an emission coefficient, k is Boltzmann's constant, and T is the junction temperature of the laser diode.
6. The system of claim 1 , wherein the processing element calculates the junction temperature of the laser diode using a predetermined linear equation, and wherein the predetermined linear equation has been determined by measuring the voltage across the laser diode over a range of low current monitor pulses having different amperages and pulsewidths and over a range of different laser diode temperatures.
7. A method for determining a junction temperature of a quasi-continuous-wave or pulsed semiconductor laser diode, the method comprising:
providing, by a high current source, high current drive pulses to the laser diode, the high current drive pulses having an amperage selected to cause the laser diode to lase:
providing, by a low current source connected in parallel with the high current source, a series of low current monitor pulses to the laser diode between the pulses of the pulsed high current, each of the low current monitor pulses having an amperage selected to not cause the laser diode to lase;
measuring, by a voltage measuring device, the voltage across the laser diode during provision of the low current monitor pulses; and
calculating, by a processing element, the junction temperature of the laser diode based on the measured voltage.
8. The method of claim 7 , further comprising:
delaying, by a delay generator, a start of the low current monitor pulses for a predetermined time after each pulse of the high current drive pulses.
9. The method of claim 7 , further comprising:
adjusting, by the processing element, a laser diode thermal management system based on the calculated junction temperature.
10. The method of claim 7 , further comprising:
determining, by the processing element, if the junction temperature exceeds a predetermined maximum temperature; and
causing, by the processing element, the high current source to decrease power, pulsewidth, or frequency of the high current drive pulses in order to achieve a desired decrease in the junction temperature.
11. The method of claim 7 , wherein calculating the junction temperature comprises calculating the junction temperature using equation I=I 0 (exp(qV/nkT)−1) in which I is the pulsed low current, I 0 is a saturation current of the laser diode, q is an electrical charge of an electron, V is the measured voltage, n is an emission coefficient, k is Boltzmann's constant, and T is the junction temperature of the laser diode.
12. The method of claim 7 , wherein calculating the junction temperature comprises calculating the junction temperature using a predetermined linear equation, and wherein the predetermined linear equation has been determined by measuring the voltage across the laser diode over a range of low current monitor pulses having different amperages and pulsewidths and over a range of different laser diode temperatures.