DNA-based electronic diodes and their applications
View Patent ↗A semiconductor device provides a metal contact, a DNA layer, wherein the metal layer and the DNA layer are adapted to form a Schottky barrier junction there between, and a conductive contact with the DNA layer.
1. A semiconductor device, comprising:
a metal contact;
a DNA layer;
wherein the metal contact and the DNA layer are adapted to form a Schottky barrier junction there between; and
a conductive contact with the DNA layer; and
wherein the conductive contact is adapted to allow light energy to pass to the DNA layer.
2. The device of claim 1 , wherein the metal contact includes gold, aluminum, copper or chromium.
3. The device of claim 1 , wherein the DNA layer includes salmon sperm DNA.
4. The device of claim 3 , wherein the DNA layer is either n- or p-type semiconductor by doping.
5. The device of claim 1 , where the conductive contact is coated with indium tin oxide.
6. The device of claim 1 , wherein the Schottky barrier has a barrier height of less than 2 eV.
7. The device of claim 1 , wherein the metal contact, the DNA layer and the conductive contact form a photodiode.