Current perpendicular to plane magnetoresistive sensor employing half metal alloys for improved sensor performance
A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be constructed with a pinned layer structure that includes a lamination of layers of Co 2 MnX and CoFe, where X is Al, Ge or Si. The Co 2 MnX can be sandwiched between the layers of CoFe to prevent Mn migration into the spacer/barrier layer. The free layer can also be constructed as a lamination of Co 2 MnX and CoFe layers, and may also be constructed so that the Co 2 MnX layer is sandwiched between CoFe layers to prevent Mn migration.
1. A magnetoresistive sensor, comprising:
a magnetic free layer structure;
a magnetic pinned layer structure comprising a lamination of layers of Co 2 FeX and a layer Co 2 MnX, where X is a material selected from the group consisting of Al, Ge and Si, wherein the layer of Co 2 MnX is sandwiched between the layers of Co 2 FeX; and
a non-magnetic layer sandwiched between the free layer structure and the pinned layer structure wherein one of the layers of Co 2 FeX acts as a diffusion barrier to prevent the Mn from diffusion from the layer of Co 2 MnX into the non-magnetic layer.
2. A magnetoresistive sensor, comprising:
a magnetic free layer structure;
a magnetic pinned layer structure comprising a lamination of layers of Co 2 FeX and Co 2 MnX, where X is a material selected from the group consisting of Al, Ge and Si; and
a non-magnetic layer sandwiched between the free layer structure and the pinned layer structure;
wherein the pinned layer is constructed such that a layer of Co 2 FeX is adjacent to the non-magnetic layer so as to prevent migration of Mn from the Co 2 MnX into the non-magnetic layer.
3. A magnetoresistive sensor as in claim 1 wherein the pinned layer comprises a layer of Co 2 MnX sandwiched between first and second layers of Co 2 FeX.
4. A magnetoresistive sensor as in claim 1 wherein the pinned layer structure further comprises a first magnetic layer comprising CoFe, a second magnetic layer structure and an antiparallel coupling layer sandwiched between the first: magnetic layer and the second magnetic layer structure, the second magnetic layer structure being located between the antiparallel coupling layer and the non-magnetic layer, and wherein the second magnetic layer structure comprises the lamination of layers of Co 2 FeX and Co 2 MnX, where X is a material selected from the group consisting of Al, Ge and Si.
5. A magnetoresistive sensor as in claim 1 wherein the free layer comprises a lamination of layers of Co 2 MnX and Co 2 FeX.
6. A magnetoresistive sensor as in claim 1 wherein the free layer comprises a layer of Co 2 MnX sandwiched between first and second layers of Co 2 FeX.
7. A magnetoresistive sensor as in claim 1 wherein the free layer includes first and second magnetic layer structures and an antiparallel coupling layer sandwiched between the first and second magnetic layer structures, each of the first and second magnetic layer structures comprising a layer of Co 2 MnX sandwiched between layers of Co 2 FeX.
8. A magnetoresistive sensor as in claim 1 wherein the free layer comprises first and second magnetic layer structures and an antiparallel coupling layer sandwiched between the first and second magnetic layer structures, the first magnetic layer structure being adjacent to the non-magnetic layer and comprising a layer of Co 2 MnX sandwiched between layers of CoFe, the second magnetic layer structure comprising a layer of CoFe and a layer of NiFe.
9. A magnetoresistive sensor as in claim 1 wherein the free layer comprises first and second magnetic layer structures and an antiparallel coupling layer sandwiched between the first and second magnetic layer structures, the first magnetic layer structure being adjacent to the non-magnetic layer and comprising CoFe, the second magnetic layer structure comprising a layer of CoFe and a layer of NiFe.
10. A magnetoresistive sensor as in claim 1 wherein the free layer comprises a layer of Co 2 MnX adjacent to the non-magnetic layer and a layer of Co 2 FeX adjacent to the layer of Co 2 MnX.
11. A magnetoresistive sensor as in claim 1 wherein the layer of Co 2 MnX has a thickness of 5 to 10 Angstroms.
12. A magnetoresistive sensor as in claim 10 wherein the layers of Co 2 MnX each have a thickness of 5 to 10 Angstroms.
13. A magnetoresistive sensor as in claim 1 wherein the free layer comprises a layer of Co 2 MnX and a layer of Co 2 FeX, with the layer of Co 2 MnX being adjacent to the non-magnetic layer, and wherein X is a material selected from the group consisting of Al, Ge and Si.