Semiconductor for use in harsh environments
View Patent ↗A gallium-nitride semiconductor apparatus may include an active region having one or more nitride-based barrier layers that are modulation-doped using a nitride-based doped layer. An active region may have at least two nitride-based barrier layers, and a nitride-based blocking layer may be disposed between the at least two barrier layers.
1. A gallium-nitride semiconductor apparatus comprising:
an active region having one or more nitride-based barrier layers that are modulation-doped using a nitride-based doped layer wherein the one or more modulation-doped nitride-based barrier layers are configured to shift Fermi levels and provide a barrier in order for the gallium-nitride semiconductor to operate at high temperatures experienced in a downhole environment.
2. An apparatus according to claim 1 , wherein the one or more nitride-based barrier layers include at least one InGaN layer.
3. An apparatus according to claim 1 , wherein the nitride-based doped layer comprises a p-doped layer.
4. An apparatus according to claim 3 , wherein the p-doped layer comprises AlGaN.
5. An apparatus according to claim 1 , wherein the nitride-based doped layer comprises p-blocking layer that is disposed between two barrier layers.
6. An apparatus according to claim 1 , wherein the active region comprises at least a portion of a semiconductor junction.
7. An apparatus according to claim 1 , wherein the active region includes one or more quantum wells.
8. An apparatus according to claim 1 , wherein the active region includes one or more of quantum wires, quantum dots and quantum dashes.
9. An apparatus according to claim 1 further comprising a substrate, the active region being disposed on the substrate.
10. An apparatus according to claim 9 , wherein the substrate includes a layer of sapphire.
11. An apparatus according to claim 9 , wherein the substrate includes a multi-layer template.
12. An apparatus according to claim 9 , wherein the multi-layer template includes a plurality of nitride-based layers.
13. A gallium-nitride semiconductor apparatus comprising:
an active region having one or more nitride-based barrier layers that are modulation-doped using a nitride-based doped layer; and
an electromagnetic energy emitter that includes the active region, the active region including an electromagnetic energy generator, the electromagnetic energy emitter and electromagnetic energy generator comprising a nitride-based laser.
14. A gallium-nitride semiconductor apparatus comprising:
an active region having at least two nitride-based barrier layers; and
a nitride-based blocking layer disposed between the at least two barrier layers wherein the nitride-based blocking layer is configured to increase an energy band in order for the gallium-nitride semiconductor to operate at high temperatures experienced in a downhole environment.
15. An apparatus according to claim 14 , wherein each of the at least two barrier layers comprise an InGaN layer.
16. An apparatus according to claim 14 , wherein the blocking layer comprises a p-doped layer.
17. An apparatus according to claim 16 , wherein the p-doped layer comprises AlGaN.
18. An apparatus according to claim 14 , wherein the active region comprises at least a portion of a semiconductor junction.
19. An apparatus according to claim 14 , wherein the active region includes an MQW structure.
20. An apparatus according to claim 14 , wherein the active region includes one or more of quantum wires, quantum dots and quantum dashes.