Electric field read/write head
View Patent ↗Provided is an electric field head including a resistance sensor to read information recorded on a recording medium. The resistance sensor includes a first semiconductor layer including a source and a drain, and a second semiconductor layer that is heterogeneously combined with the first semiconductor layer. Also, the electric field head further includes a channel between the source and the drain, in a junction region of the first and second semiconductor layers.
1. An apparatus comprising:
a read sensor of an electric field head, the read sensor comprising a first semiconductor layer defining a source and a drain, and a second semiconductor layer heterogeneously combined with the first semiconductor layer to form a channel between the source and the drain as a heterojunction region of the first and second semiconductor layers; and
an air bearing surface (ABS) layer configured to fluidically support the read sensor adjacent a rotatable recording medium as the read sensor senses data stored thereto.
2. The apparatus of claim 1 , wherein the first semiconductor layer is an InGaAs layer and the second semiconductor layer is an AlGaAs layer.
3. The apparatus of claim 1 , wherein the thickness of the first semiconductor layer is about 10-30 nm.
4. The apparatus of claim 1 , wherein the thickness of the second semiconductor layer is at least about 10 nm.
5. The apparatus of claim 1 , wherein the first and second semiconductor layers are sequentially provided on a GaAs substrate.
6. The apparatus of claim 5 , wherein a second AlGaAs layer is provided between the GaAs substrate and the first semiconductor layer.
7. The apparatus of claim 1 , wherein the ABS layer is provided on a side surface of the electric field head.
8. The apparatus of claim 1 , in which the source and drain are only formed in the first semiconductor layer.
9. The apparatus of claim 1 , in which the read sensor is adapted to read data stored to the medium as the head is supported thereabove by the ABS layer responsive to a sensed resistance between the drain and source.
10. The apparatus of claim 1 , further comprising a write sensor comprising a write electrode and an insulation layer disposed between the write electrode and the channel, the write sensor configured to write data to the rotatable data storage medium as the electric field head is supported adjacent thereto via the ABS layer.
11. The apparatus of claim 10 , in which the write sensor writes data to the medium responsive to application of write currents to the write electrode.
12. An apparatus comprising
an electric field head adapted to write data to and read data from a rotatable data storage medium, the head comprising:
a read sensor comprising a first semiconductor layer defining a source and a drain, and a second semiconductor layer heterogeneously combined with the first semiconductor layer to form a channel between the source and the drain as a heterojunction region of the first and second semiconductor layers;
a write sensor comprising a write electrode and an insulating layer disposed between the write electrode and the channel; and
an air bearing surface (ABS) layer configured to support the electric field head at a selected fly height above the storage medium during rotation thereof.
13. The apparatus of claim 12 , in which the read sensor is adapted to read data stored to the medium as the head is supported thereabove by the ABS layer responsive to a sensed resistance between the drain and source.
14. The apparatus of claim 12 , in which the write sensor is adapted to write data to the medium as the head is supported thereabove by the ABS layer responsive to application of write currents to the write electrode.
15. The apparatus of claim 12 , in which the source and drain are only formed in the first semiconductor layer.
16. The apparatus of claim 12 , wherein the first semiconductor layer is an InGaAs layer and the second semiconductor layer is an AlGaAs layer.
17. The apparatus of claim 12 , wherein the thickness of the first semiconductor layer is about 10-30 nm and the thickness of the second semiconductor layer is at least about 10 nm.
18. The apparatus of claim 12 , wherein the first and second semiconductor layers are sequentially provided on a GaAs substrate.
19. The apparatus of claim 18 , wherein a second AlGaAs layer is provided between the GaAs substrate and the first semiconductor layer.
20. The apparatus of claim 12 , wherein the ABS layer is affixed to the first and second semiconductor layers.