Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps
View Patent ↗Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular value produces an optimum combination of subcell bandgaps that provide theoretical energy conversion efficiencies nearly as good as unconstrained maximum theoretical conversion efficiency models, but which are more conducive to actual fabrication to achieve such conversion efficiencies than unconstrained model optimum bandgap combinations. Achieving such constrained or unconstrained optimum bandgap combinations includes growth of a graded layer transition from larger lattice constant on the parent substrate to a smaller lattice constant to accommodate higher bandgap upper subcells and at least one graded layer that transitions back to a larger lattice constant to accommodate lower bandgap lower subcells and to counter-strain the epistructure to mitigate epistructure bowing.
1. A monolithic, multi-bandgap, tandem, photovoltaic converter, comprising:
a top subcell with a first bandgap grown epitaxially on a first graded layer that was grown epitaxially on a substrate with a starting lattice constant of the first graded layer being matched to the substrate and with a terminal lattice constant in the growth plane being smaller than the substrate lattice constant, wherein the first bandgap of the top subcell has a lattice constant that is smaller than the substrate lattice constant;
a second graded layer grown epitaxially on the top subcell with a starting lattice constant of the second graded layer being matched to the lattice constant of the top subcell on which it is grown and a terminal lattice constant in the growth plane larger than the lattice constant of the top subcell on which it is grown, said second graded layer being transparent to radiation that can pass through the top subcell on which it is grown; and
a bottom subcell grown epitaxially on the second graded layer with a second bandgap that is smaller than the first bandgap of the top subcell and a lattice constant that matches the terminal lattice constant in the growth plane of the second graded layer.
2. The monolithic, multi-bandgap, tandem photovoltaic converter of claim 1 , wherein the substrate is the parent substrate.
3. The monolithic, multi-bandgap, tandem, photovoltaic converter of claim 1 , including at least one middle subcell grown on the top subcell before the bottom subcell.
4. The monolithic, multi-bandgap, tandem, photovoltaic converter of claim 3 , including at least one middle subcell grown on and lattice-matched to the top subcell before the second graded layer.
5. The monolithic, multi-bandgap, tandem, photovoltaic converter of claim 3 , including at least one middle subcell grown on the second graded layer before the bottom subcell and lattice-matched to the terminal lattice constant in the growth plane of the second graded layer.
6. The monolithic, multi-bandgap, tandem, photovoltaic converter of claim 4 , wherein the second graded layer is transparent to radiation transmitted by all of the subcells in front of the second graded layer.
7. The monolithic, multi-bandgap, tandem, photovoltaic converter of claim 1 , wherein the top subcell, second graded layer, and bottom subcell are mounted on a handle, and wherein the substrate and the first graded layer are removed.
8. The monolithic, multi-bandgap, tandem, photovoltaic converter of claim 1 , wherein the first graded layer is in tension and the second graded layer is in compression.
9. The monolithic, multi-bandgap, tandem, photovoltaic converter of claim 1 , wherein the terminal lattice constant in the growth plane of the second graded layer is larger than the substrate lattice constant.
10. The monolithic, multi-bandgap, tandem, photovoltaic converter of claim 1 , wherein the terminal lattice constant in the growth plane of the second graded layer is smaller than the substrate lattice constant.
11. A photovoltaic converter comprising a monolithic, multi-bandgap, tandem cell characterized by:
high bandgap energy converter means for converting high energy radiation to electricity, wherein said high energy converter means comprises a semiconductor material with a high bandgap that was grown lattice-mismatched to a substrate by growing first graded layer means on the substrate for transitioning from a substrate lattice constant to a terminal lattice constant in the growth plane that was smaller than the substrate lattice constant and the same as the semiconductor material of the high bandgap energy converter means;
second graded layer means grown epitaxially on the high bandgap energy converter means for transitioning from the lattice constant of the high bandgap energy converter means to a terminal lattice constant in the growth plane that is larger than the lattice constant of the high bandgap energy converter means, said second graded layer means also being transparent to radiation that can pass through the high bandgap converter means; and
low bandgap energy converter means grown epitaxially on the second graded layer means for converting low energy radiation to electricity.
12. The photovoltaic converter of claim 11 , including middle bandgap energy converter means grown epitaxially on the high bandgap energy converter means before the second graded layer means for converting middle energy radiation to electricity, wherein said middle bandgap energy converter means comprises a semiconductor material with a middle bandgap and that has a lattice constant the same as the lattice constant of the energy converter means on which it was grown.
13. The photovoltaic converter of claim 12 , wherein the high bandgap, middle bandgap, and low bandgap have been determined by modeling the high bandgap, middle bandgap, and low bandgap to achieve the highest overall radiation to electrical energy conversion efficiency that is theoretically possible in a selected radiation spectrum with a constraint that limits the low bandgap to designated minimum value.
14. The photovoltaic converter of claim 11 , wherein the monolithic, multi-bandgap, tandem, cell is mounted on handle means for support, and the substrate and first graded layer means are removed.