IP Library Granted Patent US 7,834,360
Granted Patent B2
US 7,834,360 · App. 12/126,253 · Granted Nov 16, 2010

Thin film transistor array substrate

Assignee: Beijing Boe Optoelectronics Technology Co., Ltd.
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Quick Facts
Patent No.
US 7,834,360
App. No.
12/126,253
Granted
Nov 16, 2010
Kind
B2
Abstract

The present invention relates to a thin film transistor array substrate comprising a gate line and a data line that are separated by an insulting layer and intersecting each other to define a pixel, wherein a data auxiliary line is disposed adjacent to an intersection portion between the data line and the gate line, and both ends of the data auxiliary line are on two sides of the intersection portion and connected with the data lines, respectively.

Claims (34)

1. A thin film transistor (TFT) array substrate, comprising:

a gate line and a data line that are insulated and separated from each other and intersecting each other to define a pixel,

wherein a data auxiliary line is disposed adjacent to an intersection portion between the data line and the gate line, and both ends of the data auxiliary line are on two sides of the intersection portion and connected with the data line, and

wherein the data auxiliary line is formed along with the data line, with a same material as the data line and on a same layer as the data line.

2. The TFT array substrate according to claim 1 , wherein the data auxiliary line is disposed on a side opposite to a thin film transistor of the pixel with respect to the data line.

3. A thin film transistor (TFT) array substrate, comprising:

a gate line and a data line that are insulated and separated from each other and intersecting each other to define a pixel; and

a pixel electrode formed above the data line and separated from the data line,

wherein a data auxiliary line is disposed adjacent to an intersection portion between the data line and the gate line, and both ends of the data auxiliary line are on two sides of the intersection portion and connected with the data line, and

wherein the data auxiliary line is formed along with the pixel electrode, with a same material as the pixel electrode and on a same layer as the pixel electrode.

4. The TFT array substrate according to claim 3 , wherein the data auxiliary line is connected with the data line by two via holes at two ends of the data auxiliary line.

5. A thin film transistor (TFT) array substrate, comprising:

a gate line and a data line that are insulated and separated from each other and intersecting each other to define a pixel; and

a pixel electrode formed above the data line and separated from the data line,

wherein a data auxiliary line is disposed adjacent to an intersection portion between the data line and the gate line, and both ends of the data auxiliary line are on two sides of the intersection portion and connected with the data line,

wherein the data auxiliary line comprises a first connecting line, a second connecting line, and a third connecting line which are connected sequentially, and

wherein the second connecting line is formed along with the data line, with a same material as the data line and on a same layer as the data line, and the first connecting line and the third connecting line are formed along with the pixel electrode, with a same material as the pixel electrode and on a same layer as the pixel electrode.

6. The TFT array substrate according to claim 5 , wherein the first connecting line and the third connecting line are connected with data line via a first via hole and a second via hole, respectively, and are connected with the second connecting line respectively via a third via hole and a fourth via hole.

7. A third film transistor (TFT) array substrate, comprising: a gate line and a data line that are insulated and separated from each other and intersecting each other to define a pixel, and

a pixel electrode formed above the data line and separated from the data line,

wherein a data auxiliary line is disposed adjacent to an intersection portion between the data line and the gate line, the data auxiliary line comprising fist, second and third connecting lines which are connected sequentially, the first and third connecting lines being on two sides of the intersection portion and connected with the data line, and

wherein the first, second and third connecting lines of the data auxiliary line are formed along with the pixel electrode, with a same material as the pixel electrode and on a same layer as the pixel electrode.

8. The TFT array substrate according to claim 7 , wherein the data auxiliary line is connected with the data line by two via holes at two ends of the data auxiliary line.

9. A thin film transistor (TFT) array substrate, comprising:

a gate line and a data line that are insulated and separated from each other and intersecting each other to define a pixel; and

a pixel electrode formed above the data line and separated from the data line,

wherein a data auxiliary line is disposed adjacent to an intersection portion between the data line and the gate line, the data auxiliary line comprising first, second and third connecting lines which are connected sequentially, the first and third connecting lines being on two sides of the intersection portion and connected with the data line, and

wherein at least one of the first, second, and third data connecting lines is formed along with the data line, with a same material as the data line and on a same layer as the data line.

10. The TFT array substrate according to claim 9 , wherein the first, second and third connecting lines of the data auxiliary line are formed along with the data line, with a same material as the data line and on a same layer as the data line.

11. The TFT array substrate according to claim 9 , wherein a layer on which the second connecting line is formed is different from a layer on which the first and third connecting lines are formed.

12. The TFT array substrate according to claim 11 , wherein the first and third connecting lines are connected with the data line via first and second via holes, respectively, and are connected with the second connecting line respectively via third and fourth via holes.

13. The TFT array substrate according to claim 11 , wherein the second connecting line is formed along with the data line, with a same material as the data line and on a same layer as the data line, the first and third connecting lines being formed along with the pixel electrode, with a same material as the pixel electrode and on a same layer as the pixel electrode.

14. The TFT array substrate according to claim 11 , wherein the second connecting line is formed along with the pixel electrode, with a same material as the pixel electrode and on a same layer as the pixel electrode, the first and third connecting lines being formed along with the data line, with a same material as the data line and on a same layer as the data line.

15. The TFT array substrate according to claim 9 , wherein the data auxiliary line is disposed on a side opposite to a thin film transistor of the pixel with respect to the data line.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2015
From: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD
To: BOE TECHNOLOGY GROUP CO., LTD.; BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO. LTD
Reel/Frame 036644/0601 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 23, 2008
From: CHOI, SEUNGJIN; SONG, YOUNGSUK
To: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
Reel/Frame 020992/0436 →
Priority Claims (1)
CN 2007 1 0175204 · Sep 27, 2007 · national
Continuity (1)
Related Publication 20090085034A1 · Apr 2, 2009