Liquid crystal display

1. Method for manufacturing a TFT array of liquid crystal display comprising steps of:

depositing a gate electrode/gate line and a pixel electrode, each of said gate electrode/gate line and said pixel electrode including at least two layers comprising a transparent conductive layer and metallic layer provided on said transparent conductive layer, and subsequently etching said gate electrode/gate line and said pixel electrode using a photoresist having patterns corresponding to said gate electrode/gate line and said pixel electrode to form a predetermined patterns;

forming a gate insulating film and a semiconductor film;

exposing said pixel electrode by etching process using said photoresist having patterns;

removing said metallic layer having at least two layer in said exposed pixel electrode by etching process; and

forming a drain electrode, a source electrode, and a source line.

2. Method for manufacturing a TFT array of liquid crystal display comprising steps of:

depositing a gate electrode/gate line and a pixel electrode, each of said gate electrode/gate line and said pixel electrode including at least two layers comprising a transparent conductive layer and metallic layer provided on said transparent conductive layer, and subsequently etching said gate electrode/gate line and said pixel electrode using a photoresist having a patterned shape corresponding to said gate electrode/gate line and said pixel electrode to form a predetermined patterns;

forming a gate insulating film and a semiconductor film;

exposing said pixel electrode by etching process using said photoresist having patterns;

forming a metallic layer for a drain electrode, a source electrode, and a source line;

etching said metallic layer using said photoresist having the predetermined patterns to form said drain electrode, said source electrode, and said source line;

wherein said metallic layer in said exposed pixel electrode having at least two layers.

3. Method for manufacturing a TFT array of liquid crystal display comprising steps of:

depositing a gate electrode/gate line and a pixel electrode, each of said gate electrode/gate line and said pixel electrode including at least two layers comprising a transparent conductive layer and metallic layer provided on said transparent conductive layer, and subsequently etching said gate electrode/gate line and said pixel electrode using a photoresist having a patterned shape corresponding to said gate electrode/gate line and said pixel electrode to form a predetermined patterns;

forming a gate insulating film and a semiconductor film;

forming a region (A) where at least of a portion of said photoresist corresponding to said semiconductor layer to be left has a thickness being larger than any other part of said photoresist, a region (C) where at least of a portion of said photoresist corresponding to a light transmitting part of said pixel electrode to be exposed is removed, and a region (B) where any parts other than said region (A) and said region (B) having a thickness smaller than that of said semiconductor layer;

etching said semiconductor layer and said gate insulating film using said photoresist having said thickness in each part to expose said pixel electrode;

removing at least said metallic layer located in upper side of said two layers in said exposed pixel electrode by etching process;

removing said photoresist in said region (B) from upper side while leaving said photoresist in said region (A);

removing said photoresist in any part other than that in said region (A); and

forming a source/drain electrodes.

4. Method for manufacturing a TFT array of liquid crystal display comprising steps of:

depositing a gate electrode/gate line, a pixel electrode and a common line, each of said gate electrode/gate line, said pixel electrode and said common line including at least two layers comprising a transparent conductive layer and a metallic layer provided on said transparent conductive layer;

etching said gate electrode/gate line, said pixel electrode and said common line using a photoresist having a patterned shape corresponding to said gate electrode/gate line, said pixel electrode and said common line to form a predetermined pattern;

forming a gate insulating film and a semiconductor film;

forming a region (A) where at least of a portion of said photoresist corresponding to said semiconductor layer to be left has a thickness being larger than any other part of said photoresist, a region (C) where at least of a portion of said photoresist corresponding to a light transmitting part of said pixel electrode to be exposed is removed, and a region (B) where any parts other than said region (A) and said region (B) having a thickness smaller than that of said semiconductor layer;

etching said semiconductor layer and said gate insulating film using said photoresist having said thickness in each part to expose said pixel electrode;

removing at least said metallic layer located in upper side of said two layers in said exposed pixel electrode by etching process;

removing said photoresist in said region (B) from upper side while leaving said photoresist in said region (A);

removing said photoresist in any part other than that in said region (A); and

forming a source/drain electrodes.

5. Method for manufacturing a TFT array of liquid crystal display comprising steps of:

depositing a gate electrode/gate line and a pixel electrode, each of said gate electrode/gate line and said pixel electrode including at least two layers comprising a transparent conductive layer and metallic layer provided on said transparent conductive layer, and subsequently etching said gate electrode/gate line and said pixel electrode using a photoresist having a predetermined patterned shape corresponding to said gate electrode/gate line and said pixel electrode to form a predetermined patterns;

forming a gate insulating film and a semiconductor film;

forming a region (A) where at least of a portion of said photoresist corresponding to said semiconductor layer to be left has a thickness being larger than any other part of said photoresist, a region (C) where at least of a portion of said photoresist corresponding to a light transmitting part of said pixel electrode to be exposed is removed, and a region (B) where any parts other than said region (A) and said region (B) having a thickness smaller than that of said semiconductor layer;

etching said semiconductor layer and said gate insulating film using said photoresist having said thickness in each part to expose said pixel electrode;

removing said photoresist in said region (B) from upper side while leaving said photoresist in said region (A);

removing said photoresist in any part other than that in said region (A);

forming a source/drain electrode made of the same metallic material as that used for an upper layer of said two layers of said gate line; and

removing said source/drain electrode by etching process, while removing said metallic layer located in said upper layer of said two layers of said exposed pixel electrode by etching process.