Masking process using photoresist
View Patent ↗The invention provides a masking process using photoresist, comprising: attaching a compress mask plate to a substrate; coating photoresist in a mask pattern of the compress mask plate; baking the photoresist from the substrate side; removing the compress mask plate from the substrate to form a desired photoresist pattern on the substrate. The inventive method simplifies the photolithography process, thereby the process time is shortened and the yield is increased.
1. A masking process using photoresist, comprising:
attaching a compress mask plate to a substrate and exposing a portion of the substrate through a mask pattern of the compress mask plate;
coating photoresist through the mask pattern of the compress mask plate and thus on the exposed portion of the substrate;
baking the photoresist from the substrate side;
removing the compress mask plate from the substrate to form a desired photoresist pattern on the substrate, wherein said coating, baking and mask removal steps are carried out sequentially without any intervening irradiation step.
2. The method according to claim 1 , wherein attaching the compress mask plate to the substrate comprising:
attaching the compress mask plate having a same shape and size as the substrate to the substrate, and aligning the compress mask plate with the substrate using an align mark.
3. The method according to claim 1 , wherein coating photoresist in the mask pattern of the compress mask plate comprising:
coating the photoresist in the mask pattern on the compress mask plate using a roll coating method or a spin coating method.
4. The method according to claim 1 , wherein coating photoresist in the mask pattern of the compress mask plate comprising:
coating the photoresist in the mask pattern on the compress mask plate to a thickness of about 1˜5 μm by controlling an amount of the coated photoresist.
5. The method according to claim 1 , wherein baking the photoresist from the substrate side comprising:
baking the photoresist at a baking temperature of about 80˜160° C. from the substrate side.
6. The method according to claim 1 , wherein baking the photoresist comprising: baking the photoresist for about 5 to about 50 seconds.
7. The method according to claim 1 , wherein the photoresist is positive photoresist or negative photoresist.
8. The method according to claim 1 , wherein the compress mask plate is made of a nonmetal material or a metal material.
9. The method according to claim 8 , wherein the mask pattern in the compress mask plate is formed through a planography method.
10. The method according to claim 1 , wherein the photoresist comprises following compositions in weight percent: solvent of 70%˜75%, polymer resin of 19%˜24, sensitizer of 5%˜6%, and additives of 1%˜5%.
11. A mask plate for a masking process, comprising an opening in a pattern for receiving photoresist therein when the photoresist is coated through the mask plate.
12. The mask according to claim 11 , further comprising an alignment mark.