IP Library Granted Patent US 8,081,405
Granted Patent B2
US 8,081,405 · App. 12/129,120 · Granted Dec 20, 2011

Current-perpendicular-to-plane (CPP) read sensor with smoothened multiple reference layers

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Quick Facts
Patent No.
US 8,081,405
App. No.
12/129,120
Granted
Dec 20, 2011
Kind
B2
Abstract

A current-to-perpendicular-to-plane (CPP) read sensor with multiple reference layers and associated fabrication methods are disclosed. According to one embodiment, the multiple reference layers of a CPP read sensor include a first reference layer (e.g., Co—Fe) formed by a ferromagnetic polycrystalline film, a second reference layer (e.g., Co—Fe—Hf) formed by a ferromagnetic amorphous film, a third reference layer (e.g., Co—Fe—B) formed by a ferromagnetic amorphous film, and a fourth reference layer (e.g., Co—Fe) formed by a ferromagnetic polycrystalline film. A plasma treatment is applied to the fourth reference layer for surface smoothening, and no replenishment is needed as long as the fourth reference layer is not completely removed after the plasma treatment. The fourth reference layer protects the surface of the third reference layer from spin polarization deterioration caused by the plasma treatment, thereby maintaining a strong TMR or GMR effect.

Claims (52)

1. A reference layer structure of a current-perpendicular-to-plane (CPP) read sensor, the reference layer structure comprising:

a first reference layer formed by a ferromagnetic polycrystalline film;

a second reference layer formed by a first ferromagnetic amorphous film on the first reference layer;

a third reference layer formed by a second ferromagnetic amorphous film on the second reference layer, wherein a composition of the first ferromagnetic amorphous film is distinct from a composition of the second ferromagnetic amorphous film; and

a fourth reference layer formed by a ferromagnetic polycrystalline film on the third reference layer.

2. The reference layer structure of claim 1 wherein the first reference layer is formed by a ferromagnetic polycrystalline Co—Fe film including Co with a content ranging from 50 to 90 at %, Fe with a content ranging from 10 to 50 at %, and having a thickness ranging from 0.2 to 1.2 nanometers.

3. The reference layer structure of claim 1 wherein the second reference layer is formed by a ferromagnetic amorphous Co—Fe—X film including Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, X with a content ranging from 6 to 30 at %, where X is Hf, Zr or Y, and having a thickness ranging from 0.6 to 3 nanometers.

4. The reference layer structure of claim 1 wherein the third reference layer is formed by a ferromagnetic amorphous Co—Fe—B film including Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, B with a content ranging from 6 to 30 at %, and having a thickness ranging from 1 to 2 nanometers.

5. The reference layer structure of claim 1 wherein the fourth reference layer is formed by a ferromagnetic polycrystalline Co—Fe film including Co with a content ranging from 50 to 90 at %, Fe with a content ranging from 10 to 50 at %, and having a thickness ranging from 0.2 to 1.2 nanometers.

6. A current-perpendicular-to-plane (CPP) read sensor, comprising:

a keeper layer;

an antiparallel coupling layer on the keeper layer;

multiple reference layers on the antiparallel coupling layer, the multiple reference layers comprising:

a first reference layer formed by a ferromagnetic polycrystalline film;

a second reference layer formed by a first ferromagnetic amorphous film on the first reference layer;

a third reference layer formed by a second ferromagnetic amorphous film on the second reference layer, wherein a composition of the first ferromagnetic amorphous film is distinct from a composition of the second ferromagnetic amorphous film; and

a fourth reference layer formed by a ferromagnetic polycrystalline film on the third reference layer;

a barrier or spacer layer on the fourth reference layer; and

sense layers on the barrier or spacer layer.

7. The CPP read sensor of claim 6 wherein the first reference layer is formed by a ferromagnetic polycrystalline Co—Fe film including Co with a content ranging from 50 to 90 at %, Fe with a content ranging from 10 to 50 at %, and having a thickness ranging from 0.2 to 1.2 nanometers.

8. The CPP read sensor of claim 6 wherein the second reference layer is formed by a ferromagnetic amorphous Co—Fe—X film including Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, X with a content ranging from 6 to 30 at %, where X is Hf, Zr or Y, and having a thickness ranging from 0.6 to 3 nanometers.

9. The CPP read sensor of claim 6 wherein the third reference layer is formed by a ferromagnetic amorphous Co—Fe—B film including Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, B with a content ranging from 6 to 30 at %, and having a thickness ranging from 1 to 2 nanometers.

10. The CPP read sensor of claim 6 wherein the fourth reference layer is formed by a ferromagnetic polycrystalline Co—Fe film including Co with a content ranging from 50 to 90 at %, Fe with a content ranging from 10 to 50 at %, and having a thickness ranging from 0.2 to 1.2 nanometers.

11. The CPP read sensor of claim 6 wherein the barrier layer is formed by an electrically insulating nonmagnetic MgO X film with a thickness ranging from 0.4 to 2 nanometers.

12. The CPP read sensor of claim 6 wherein the spacer layer is formed by an electrically conducting nonmagnetic Cu—O film with a thickness ranging from 1.6 to 4 nanometers.

13. The CPP read sensor of claim 6 wherein the multiple sense layers comprise:

a first sense layer formed by a ferromagnetic polycrystalline film on the barrier or spacer layer;

a second sense layer formed by the first ferromagnetic amorphous film on the first sense layer; and

a third sense layer formed by the second ferromagnetic amorphous film on the second sense layer.

14. The CPP read sensor of claim 13 wherein the first sense layer is formed by a ferromagnetic polycrystalline Co—Fe film including Co with a content ranging from 50 to 90 at %, Fe with a content ranging from 10 to 50 at %, and having a thickness ranging from 0.2 to 1.2 nanometers.

15. The CPP read sensor of claim 13 wherein the second sense layer is formed by a ferromagnetic amorphous Co—Fe—B film including Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, B with a content ranging from 6 to 30 at %, and having a thickness ranging from 1 to 2 nanometers.

16. The CPP read sensor of claim 13 wherein the third sense layer is formed by a ferromagnetic amorphous Co—Fe—X film including Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, X with a content ranging from 6 to 30 at %, where X is Hf, Zr or Y, and having a thickness ranging from 0.6 to 3 nanometers.

17. A hard disk drive, comprising:

a hard disk; and

a read head that includes a current-perpendicular-to-plane (CPP) read sensor for reading data from the hard disk, the CPP read sensor comprising:

multiple seed layers;

a pinning layer on the multiple seed layers;

a flux closure structure on the pinning layer, wherein the flux closure structure comprises:

a keeper layer;

an antiparallel coupling layer on the keeper layer;

multiple reference layers on the antiparallel coupling layer, the multiple reference layers comprising:

a first reference layer formed by a ferromagnetic polycrystalline film;

a second reference layer formed by a first ferromagnetic amorphous film on the first reference layer;

a third reference layer formed by a second ferromagnetic amorphous film on the second reference layer, wherein a composition of the first ferromagnetic amorphous film is distinct from a composition of the second ferromagnetic amorphous film; and

a fourth reference layer formed by a ferromagnetic polycrystalline film on the third reference layer;

a barrier or spacer layer on the flux closure structure;

multiple sense layers on the barrier or spacer layer; and

a cap layer on the multiple sense layers.

18. The hard disk drive of claim 17 wherein the first reference layer is formed by a ferromagnetic polycrystalline Co—Fe film including Co with a content ranging from 50 to 90 at %, Fe with a content ranging from 10 to 50 at %, and having a thickness ranging from 0.2 to 1.2 nanometers.

19. The hard disk drive of claim 17 wherein the second reference layer is formed by a ferromagnetic amorphous Co—Fe—X film including Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, X with a content ranging from 6 to 30 at %, where X is Hf, Zr or Y, and having a thickness ranging from 0.6 to 3 nanometers.

20. The hard disk drive of claim 17 wherein the third reference layer is formed by a ferromagnetic amorphous Co—Fe—B film including Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, B with a content ranging from 6 to 30 at %, and having a thickness ranging from 1 to 2 nanometers.

21. The hard disk drive of claim 17 wherein the fourth reference layer is formed by a ferromagnetic polycrystalline Co—Fe film including Co with a content ranging from 50 to 90 at %, Fe with a content ranging from 10 to 50 at %, and having a thickness ranging from 0.2 to 1.2 nanometers.

Assignments (7)
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
RELEASE OF SECURITY INTEREST AT REEL 052915 FRAME 0566 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 059127/0001 →
SECURITY INTEREST Recorded Feb 6, 2020
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS AGENT
Reel/Frame 052915/0566 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 6, 2016
From: HGST NETHERLANDS B.V.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 040826/0821 →
CHANGE OF NAME Recorded Oct 25, 2012
From: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
To: HGST NETHERLANDS B.V.
Reel/Frame 029341/0777 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2008
From: LIN, TSANN
To: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
Reel/Frame 021015/0903 →