Method of manufacturing capacitive elements for a capacitive device
View Patent ↗A method of manufacturing capacitive elements for a capacitive device which comprises one or more layers is provided. At least one layer is etched from a first surface to a second surface thereof to form two sections of the layer, such that the sections are movable relative to one another, and such that a wall extending from the first surface to the second surface is formed on each of the two sections, the walls defining a gap therebetween. An etching step forms multiple recesses in each wall such that multiple capacitive elements are defined between adjacent recesses, the capacitive elements of one wall being offset from those of the other wall when the sections are stationary with respect to one another. A corresponding capacitive device is also provided.
1. A method of manufacturing capacitive elements for a capacitive device comprising one or more layers, the method comprising:
etching from a first surface to a second surface of at least one layer to form two sections of the layer, such that the sections are movable relative to one another, and such that a wall extending from the first surface to the second surface is formed on each of the two sections, the walls defining a gap therebetween; and
etching to form a plurality of recesses in connection with each wall such that capacitive elements are respectively defined between adjacent recesses, the capacitive elements of one wall being offset from those of the other wall when the sections are stationary with respect to one another.
2. The method according to claim 1 , further comprising providing an insulating layer on the walls formed between the first and the second surfaces.
3. The method according to claim 2 , wherein providing an insulating layer comprises growing an oxide layer.
4. The method according to claim 1 , further comprising providing conductive material on the walls to form the capacitive elements in the form of a plurality of electrical conductors, which are insulated from the at least one layer by the insulating layer, thereon, such that the gap defined by the walls is maintained.
5. The methods according to claim 4 , wherein providing the conductive material includes:
filling the gap between the walls with electrically conductive material; and
etching the electrically conductive material to form the multiple electrical conductors.
6. The method according to claim 4 , wherein providing the conductive material includes:
filling the gap between the walls with a layer of polymer material;
masking the polymer layer;
etching the polymer layer to form multiple holes therein; and
patterning the conductive material such that the multiple electrical conductors are provided in the holes.
7. The method according to claim 4 , further comprising:
patterning a plurality of conductive elements on at least one of the first and second surfaces, wherein the conductive elements are positioned to allow connection to the electrical conductors formed on the walls.
8. The method according to claim 7 , the method further comprising:
providing a layer of polymer material on at least one of the first and second surfaces; and
etching the polymer layer such that the conductive elements patterned on at least one of the first and second surfaces are at least partially exposed.
9. A capacitive device, comprising:
at least one layer having two sections that are movable relative to one another, wherein a wall extending from a first surface to a second surface of the layer is formed on each of the two sections, the walls defining a gap therebetween;
wherein each section of the layer comprises a plurality of recesses in connection with each wall such that capacitive elements are respectively defined between adjacent recesses, the capacitive elements of one wall being offset from those of the other wall when the two sections are stationary with respect to one another.