Method of Manufacturing Electrical Conductors for a Semiconductor Device

1 . A method of manufacturing an electrical conductor for a semiconductor device, the device having one or more layers, the method comprising:

etching from a first surface to a second surface of at least one layer of the device to form a channel having a wall extending from the first surface to the second surface, the channel defining a gap extending from the first surface to the second surface;

providing an insulating layer on the channel wall; and

patterning conductive material on the channel wall to form multiple separate electrical conductors, which are insulated from material of the at least one layer by the insulating layer, thereon, such that the gap that extends from the first surface to the second surface is maintained.

2 . The method according to claim 1 , wherein providing an insulating layer comprises growing an oxide layer.

3 . The method according to claim 1 , further comprising:

patterning multiple conductive elements on at least one of the first and second surfaces, wherein the multiple conductive elements are positioned to allow connection to the multiple electrical conductors provided in the channel.

4 . The method according to claim 1 , further comprising:

providing a layer of polymer material on the channel wall;

masking the polymer layer; and

patterning the polymer layer to form multiple recesses in the channel wall.

5 . The method according to claim 4 , further comprising:

providing the layer of polymer material on at least one of the first and second surfaces; and

etching the polymer layer such that multiple conductive elements patterned on at least one of the first and second surfaces are at least partially exposed.

6 . The method according to claim 4 , wherein the conductive material is patterned such that the multiple electrical conductors are provided in the recesses formed in the channel wall.

7 . The method according to claim 1 , wherein the channel is open at one end thereof.

8 . The method according to claim 1 , wherein the channel is open at both ends.

9 . The method according to claim 1 , wherein the channel is formed in a sawn recess of the layer.

10 . The method according to claim 9 , wherein the electrical conductors extend into the channel such that, upon sawing the recess, the sawn surfaces of the conductors and the layer are flush with one another.

11 . The method according to claim 1 , further comprising connecting an edge surface of a first layer to a surface of a second layer.

12 . The method according to claim 1 , wherein the ends of the conductors extend beyond at least one of the first and second surfaces of a first layer, such that when a second layer is connected to the conductors of the surface of the first layer, a space is maintained between the first and second layers.

13 . The method according to claim 1 , further comprising providing electrically conductive pads on at least one of the first and second surfaces.

14 . A semiconductor device, comprising:

at least one layer comprising:

a channel having a wall extending from the first surface to the second surface, the channel defining a gap extending from the first surface to the second surface;

an insulating layer provided on the channel wall; and

multiple electrical conductors patterned on the channel wall, the electrical conductors being insulated from material of the at least one layer by the insulating layer, such that the gap that extends from the first surface to the second surface is maintained.