Ridge waveguide laser with flared facet
View Patent ↗Embodiments disclosed herein relate to a laser die. The laser die includes a base epitaxial portion, a mesa portion, and first and second facets, wherein at least one of the first and second facets is flared such that an area of the facet is increased. Embodiments disclosed herein also relate to a high-speed laser. The high-speed laser includes a substrate, an active region positioned above the substrate, a mesa positioned above the active region, and one or more facets, wherein at least one of the one or more facets includes a flared portion configured to increase an area of the facet.
1. A laser die, comprising:
a substrate;
a base epitaxial portion grown on the substrate, wherein the base epitaxial portion includes:
an active region positioned above the substrate;
a first confinement layer positioned above the active region;
a second confinement layer positioned above the first confinement layer; and
a first spacer layer positioned above the second confinement layer;
a first spacer layer positioned above the second confinement layer;
a mesa portion;
first and second facets, wherein at least one of the first and second facets is flared such that an area of the facet is increased;
a mode modifier layer positioned above the substrate;
a buffer layer positioned above the mode modifier layer;
a third confinement layer positioned above the buffer layer;
a fourth confinement layer positioned above the third confinement layer and below the active region;
an etch stop layer positioned above the first spacer layer;
a second spacer layer positioned above the etch stop layer;
a grating layer positioned above the second spacer layer; and
a top layer positioned above the grating layer and below the mesa.
2. The laser die in accordance with claim 1 , wherein both the first and second facets are flared such that an area of both facets is increased.
3. The laser die in accordance with claim 1 , wherein the at least one facet is flared approximately 10 microns in an X dimension.
4. The laser die in accordance with claim 1 , wherein the at least one facet is flared approximately 10 microns in a Y dimension.
5. The laser die in accordance with claim 1 , wherein the at least one facet is flared approximately 10 microns in both an X and a Y dimension.
6. The laser die in accordance with claim 1 , wherein flaring the at least one facet at least partially increases the optical strength of an emitted beam of light.
7. The laser die in accordance with claim 1 , wherein the at least one flared facet includes a coating material that at least partially increases the emission of light from the laser die.
8. The laser die in accordance with claim 1 , wherein a thin metal layer and/or a dielectric layer are placed over top at least a portion of the mesa portion.
9. A high-speed laser comprising:
a substrate;
an active region positioned above the substrate;
a first confinement layer positioned above the active region;
a second confinement layer positioned above the first confinement layer;
a first spacer layer positioned above the second confinement layer;
a mesa positioned above the active region;
one or more facets, wherein at least one of the one or more facets includes a flared portion configured to increase an area of the facet;
a mode modifier layer positioned above the substrate;
a buffer layer positioned above the mode modifier layer;
a third confinement layer positioned above the buffer layer;
a fourth confinement layer positioned above the third confinement layer and below the active region;
an etch stop layer positioned above the first spacer layer;
a second spacer layer positioned above the etch stop layer;
a grating layer positioned above the second spacer layer; and
a top layer positioned above the grating layer and below the mesa.
10. The laser as recited in claim 9 , wherein the laser is an FP laser.
11. The laser as recited in claim 9 , wherein the laser is a DFB laser.
12. The laser as recited in claim 9 , further wherein:
the substrate, the mode modifier layer, the first confinement layer, and the second confinement layer are n-type layers;
the third confinement layer, the fourth confinement layer, the first spacer layer, the etch stop layer, the second spacer layer, and the grating layer are p-type layers; and
a doping material of the active region is a p-type material.
13. The laser as recited in claim 12 , further wherein:
the substrate, the mode modifier layer, the first confinement layer, and the second confinement layer are p-type layers; and
the third confinement layer, the fourth confinement layer, the first spacer layer, the etch stop layer, the second spacer layer, and the grating layer are n-type layers; and
a doping material of the active region is an n-type material.
14. The laser as recited in claim 9 , wherein more than one facet is flared such that an area of the facets is increased.
15. The laser as recited in claim 9 , wherein flaring the at least one facet at least partially increases the optical strength of an emitted beam of light.
16. A TOSA comprising:
a housing; and
the laser as recited in claim 9 positioned within the housing.
17. An optical transceiver module comprising:
the TOSA as recited in claim 16 ;
a ROSA; and
a PCB in electrical communication with the TOSA and the ROSA.