Organic transistor and active-matrix substrate
View Patent ↗An organic transistor includes a gate electrode having a predetermined length, source and drain electrodes overlapping the gate electrode in plan view, a channel region formed of the organic semiconductor between the source and drain electrodes, and a functional portion disposed on a first side of the gate electrode in a length direction thereof and connected to the drain electrode through a strip-like connection wiring line. A strip-like dummy connection wiring line is connected to the drain electrode so as to extend toward a second side of the gate electrode in the length direction thereof and has a width that is less than twice the width of the connection wiring line. The connection wiring line extends to or beyond an edge of the gate electrode on the first side, and the dummy connection wiring line extends to or beyond an edge of the gate electrode on the second side.
1. An organic transistor comprising:
a gate electrode having a predetermined length;
source and drain electrodes overlapping the gate electrode in plan view;
an organic semiconductor portion formed of an organic material between the source and drain electrodes;
a channel region provided in the organic semiconductor portion to function as a channel between the source and drain electrodes; and
a functional portion disposed on a first side of the gate electrode in a length direction thereof and connected to the drain electrode through a strip-like connection wiring line;
wherein the entire drain electrode overlaps the gate electrode in plan view, the connection wiring line being connected to the drain electrode so as to extend toward the first side, a strip-like dummy connection wiring line being connected to the drain electrode so as to extend toward a second side of the gate electrode in the length direction thereof and having a width that is less than twice the width of the connection wiring line; and
wherein the connection wiring line extends to or beyond an edge of the gate electrode on the first side and the dummy connection wiring line extends to or beyond an edge of the gate electrode on the second side.
2. The organic transistor according to claim 1 , wherein the connection wiring line and the dummy connection wiring line have the same width.
3. The organic transistor according to claim 1 , wherein the source and drain electrodes have an interdigital shape.
4. The organic transistor according to claim 1 , wherein the connection wiring line is formed by photolithography and has a width of 1 to 10 μm.
5. The organic transistor according to claim 1 , wherein the connection wiring line is formed by printing and has a width of 10 to 100 μm.
6. The organic transistor according to claim 1 , wherein the entire organic semiconductor portion overlaps the gate electrode in plan view.
7. An active-matrix substrate comprising a plurality of organic transistors according to claim 1 .