A memory device is provided which has: a memory cell to store data; a word line to select the memory cell; a bit line connectable to the selected memory cell; a precharge power supply to supply a precharge voltage to the bit line; a precharge circuit to connect or disconnect the precharge power supply to or from the bit line; and a current limiting element to control the magnitude of a current flowing between the precharge power supply and the bit line at least by two steps according to an operation status.
1. A memory device, comprising:
a memory cell to store data;
a word line to select the memory cell;
a bit line connectable to the selected memory cell;
a precharge power supply to supply a precharge voltage to the bit line;
a precharge circuit to connect or disconnect the precharge power supply to or from the bit line; and
a current limiting element to control the magnitude of a current flowing between the precharge power supply and the bit line at a precharge time,
wherein said magnitude of a current flowing includes at least a first magnitude of the current flowing and the second magnitude of a current flowing,
wherein the first magnitude of a current flowing is larger than the second magnitude of a current flowing.
2. The memory device according to claim 1 , wherein the current limiting element sets the first magnitude of a current flowing at the time of starting connection of the bit line to said precharge power supply and sets the second magnitude of a current flowing after predetermined time passes from the time starting the connection.
3. The memory device according to claim 1 , wherein the current limiting element sets the first magnitude of a current flowing at any one of a read operation and a write operation, wherein the current limiting element sets the second magnitude of a current flowing at a refresh operation.
4. The memory device according to claim 1 ,
wherein the first magnitude of the current flowing includes a third magnitude of the current flowing and a fourth magnitude of the current flowing,
wherein the third magnitude of the current flowing is larger that the fourth magnitude of the current flowing, and
wherein the third magnitude of the current flowing is set operation at any one of a read operation and a write operation and the fourth magnitude of the current flowing is set at a refresh.
5. The memory device according to claim 1 , wherein the current limiting element includes a transistor, and a gate of which receives a gate voltage corresponding to any one of the first magnitude of the current flowing and the second magnitude of the current flowing.
6. The memory device according to clan 1 , wherein the current limiting element controls the magnitude of the current flowing without making a current flowing through the current limiting element substantially zero.
7. A memory device, comprising:
a memory cell to store data;
a word line to select the memory cell;
a bit line connectable to the selected memory cell;
a precharge power supply to supply a precharge voltage to the bit line;
a precharge circuit to supply the precharge power supply to the bit line;
a voltage switching circuit to select any one of a plurality of voltages according to a control signal at a precharge time; and
a current limiting element to supply the precharge voltage to the precharge circuit based on the selected one of the plurality of voltages at a precharge time,
wherein the plurality of voltages include a first voltage and a second voltage which is smaller than the first voltage.
8. The memory device according to claim 7 , wherein the first voltage is selected at the time of starting supply of the precharge power supply to the bit line and the second voltage is selected after predetermined time passes from the time starting the supply.
9. The memory device according to claim 7 , wherein the first voltage is supplied to the current limiting element at any one of a read operation, a write operation and a refresh operation and the second voltage is supplied to the current limiting element after predetermined time passes from the time starting the any one of operations.
10. The memory device according to claim 7 , wherein the current limiting element includes a transistor whose gate receives the selected voltage.
11. The memory device according to claim 7 ,
wherein the first voltage includes a third voltage and a fourth voltage which is smaller than the third voltage,
wherein the third voltage is selected at any one of a read operation and a write operation and the fourth voltage is selected at a refresh operation.
12. The memory device according to claim 7 , wherein the voltage switching outputs a precharge signal based on the control signal and includes a circuit that generates a selection signal based on the control signal.
13. The memory device according to claim 7 , further comprising:
a sense amplifier to amplify the voltage on the bit line and be used commonly by the adjacent memory sells.
14. The memory device according to claim 7 , wherein the current limiting element controls the magnitude of the current flowing without making a current flowing through the current limiting element substantially zero.
15. A memory device, comprising:
a memory cell to store data;
a word line to select the memory cell;
a bit line connectable to the selected memory cell;
a precharge power supply to supply a precharge voltage to the bit line;
a precharge circuit to supply the precharge power supply to the bit line; and
a current limiting element to supply the precharge voltage to the precharge circuit based on a sense amplifier driving signal.
16. The memory device according to claim 15 , wherein the current limiting element includes a transistor whose gate receives the sense amplifier driving signal.
17. A memory device, comprising
a memory cell to store data;
a word line to select the memory cell;
a bit line connectable to the selected memory cell;
a precharge power supply to supply a precharge voltage to the bit line;
a precharge circuit to connect or disconnect the precharge power supply to or from the bit line; and
a current limiting element to control the magnitude of a current flowing between the precharge power supply and the bit line,
wherein said magnitude of a current flowing includes at least a first magnitude of the current flowing and the second magnitude of a current flowing,
wherein the first magnitude of a current flowing is larger than the second magnitude of a current flowing,
wherein the current limiting element sets the first magnitude of a current flowing at any one of a read operation and a write operation, and
wherein the current limiting element sets the second magnitude of a current flowing at a refresh operation.
18. A memory device, comprising:
a memory cell to store data,
a word line to select the memory cell;
a bit line connectable to the selected memory cell;
a precharge power supply to supply a precharge voltage to the bit line;
a precharge circuit to supply the precharge power supply to the bit line;
a voltage switching circuit to select any one of a plurality of voltages according to a control signal; and
a current limiting element to supply the precharge voltage to the precharge circuit based on the selected one of the plurality of voltages,
wherein the plurality of voltages include a first voltage and a second voltage which is smaller than the first voltage,
wherein the first voltage includes a third voltage and a fourth voltage which is smaller than the third voltage, and
wherein the third voltage is selected at any one of a read operation and a write operation and the fourth voltage is selected at a refresh operation.