IP Library Granted Patent US 7,829,355
Granted Patent B2
US 7,829,355 · App. 12/134,406 · Granted Nov 9, 2010

Method for inspecting semiconductor device

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Quick Facts
Patent No.
US 7,829,355
App. No.
12/134,406
Granted
Nov 9, 2010
Kind
B2
Abstract

A method for inspecting a semiconductor device includes carrying out a first test for inspecting characteristics of semiconductor devices under a shielded (dark) condition to discriminate non-defective devices; and carrying out a second test on the semiconductor devices which have passed the first test as non-defective devices, for inspecting characteristics of the semiconductor devices. The second test is carried out while a predetermined color of light is applied to the semiconductor devices.

Claims (14)

1. A method for inspecting a semiconductor device comprising:

carrying out a first test for inspecting characteristics of semiconductor devices under a shielded (dark) condition to discriminate non-defective devices; and

carrying out a second test on the semiconductor devices which have passed the first test as non-defective devices, for inspecting characteristics of the semiconductor devices,

wherein the second test is carried out while a predetermined color of light is applied to the semiconductor devices, and the second test is carried out after the first test.

2. A method for inspecting a semiconductor device according to claim 1 , wherein said semiconductor devices to be inspected are LSIs for a LCD panel.

3. A method for fabricating a semiconductor device comprising:

forming a plurality of semiconductor devices on a wafer;

carrying out a first test for inspecting characteristics of the semiconductor devices under a shielded (dark) condition to discriminate non-defective devices; and

carrying out a second test on the semiconductor devices which have passed the first test as non-defective devices, for inspecting characteristics of the semiconductor devices,

wherein the second test is carried out while a predetermined color of light is applied to the semiconductor devices, and the second test is carried out after the first test.

4. A method for fabricating a semiconductor device according to claim 3 , further comprising:

after the second test, dicing the wafer to divide the semiconductor devices from each other; and

discriminating the semiconductor devices that have passed both the first and second tests.

5. A method for fabricating a semiconductor device according to claim 3 , wherein said semiconductor devices to be inspected are LSIs for a LCD panel.

Assignments (3)
CHANGE OF NAME Recorded Mar 21, 2014
From: OKI SEMICONDUCTOR CO., LTD
To: LAPIS SEMICONDUCTOR CO., LTD.
Reel/Frame 032495/0483 →
CHANGE OF NAME Recorded Jan 29, 2009
From: OKI ELECTRIC INDUSTRY CO., LTD.
To: OKI SEMICONDUCTOR CO., LTD.
Reel/Frame 022231/0935 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 6, 2008
From: ANZAI, YASUHITO
To: OKI ELECTRIC INDUSTRY CO., LTD.
Reel/Frame 021067/0885 →