Compact magnetic random access memory cell with slotted bit line and method of manufacturing same
Embodiments of the invention provide compact magnetic random access memory cell, comprising a word line; a bit line comprising a slot formed therein; a magnetic storage element disposed between the word line and the bit line; an access transistor located below the bit line and aligned with the slot therein; and a conductor passing through the slot in the bit line electrically connect the magnetic storage element to the access transistor.
1. A magnetic random access memory cell, comprising:
a word line;
a bit line comprising a slot formed therein;
a magnetic storage element disposed between the word line and the bit line;
an access transistor located below the bit line and aligned with the slot therein; and
a conductor passing through the slot in the bit line electrically connect the magnetic storage element to the access transistor; wherein an area of the cell is 3.75 F.
2. The magnetic random access memory cell of claim 1 , wherein the magnetic storage element comprises a Magnetic Tunnel Junction (MTJ).
3. The magnetic storage random access memory cell of claim 1 , wherein the conductor is not laterally offset relative to the magnetic storage element.
4. The magnetic random access memory cell of claim 1 , wherein the conductor is defined at least in part by a conductive via formed in a dielectric material.
5. A memory device, comprising:
an array of magnetic random access memory cells arranged in grid a word line, wherein
each magnetic random access memory cell comprises:
a bit line comprising a slot formed therein;
a magnetic storage element disposed between the word line and the bit line;
an access transistor located below the bit line and aligned with the slot therein; and
a conductor passing through the slot in the bit line electrically connect the magnetic storage element to the access transistor; wherein an area of the cell is 3.75 F.
6. The memory device of claim 5 , wherein the magnetic storage element comprises a Magnetic Tunnel Junction (MTJ).
7. The memory device of claim 5 , wherein the conductor is not laterally offset relative to the magnetic storage element.
8. The memory device of claim 5 , wherein the conductor is defined at least in part by a conductive via formed in a dielectric material.