Light-emitting device, method for manufacturing the same, and electronic apparatus
View Patent ↗The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects.
1. A light-emitting device comprising:
a light-emitting element over a substrate, the light-emitting element being partitioned from an adjacent light-emitting element by a partition wall,
wherein the light-emitting element comprises:
a first electrode;
a layer formed over the first electrode;
a light-emitting layer formed over the layer; and
a second electrode formed over the light-emitting layer,
wherein the layer contains a transition metal oxide, an organic compound and a halogen atom, the organic compound being an aromatic amine compound or an aromatic hydrocarbon,
wherein a top surface of the layer is aligned with a top surface of the partition wall, and
wherein the partition wall contains the transition metal oxide and the organic compound.
2. The light-emitting device according to claim 1 , wherein the layer has a higher conductivity than the partition wall.
3. The light-emitting device according to claim 1 , wherein a difference between a film thickness of the layer and a film thickness of the partition wall is within ±5% of the film thickness of the partition wall.
4. The light-emitting device according to claim 1 , wherein a concentration of the halogen atom contained in the layer is 1×10 21 atoms/cm 3 or more.
5. The light-emitting device according to claim 1 , wherein a weight percent of the transition metal oxide in the layer is greater than or equal to 5% and less than or equal to 25%.
6. The light-emitting device according to claim 1 , wherein the transition metal oxide is molybdenum oxide.
7. The light-emitting device according to claim 1 , wherein the transition metal oxide is molybdenum trioxide.
8. The light-emitting device according to claim 1 , wherein the halogen atom is fluorine or chlorine.
9. The light-emitting device according to claim 1 , wherein each of a film thickness of the layer and a film thickness of the partition wall is 500 nm or more.
10. The light-emitting device according to claim 1 , wherein the light-emitting device is incorporated in one selected from the group consisting of a television set, a computer, a cellular telephone, a camera, a backlight of a liquid crystal display device, a table lamp and an indoor lighting apparatus.
11. A light-emitting device comprising:
a light-emitting element over a substrate, the light-emitting element being partitioned from an adjacent light-emitting element by a partition wall,
wherein the light-emitting element comprises:
a first electrode;
a layer formed over the first electrode;
a light-emitting layer formed over the layer; and
a second electrode formed over the light-emitting layer,
wherein the layer contains a transition metal oxide, an organic compound and a halogen atom,
wherein a top surface of the layer is aligned with a top surface of the partition wall, and
wherein the partition wall contains the transition metal oxide and the organic compound.
12. The light-emitting device according to claim 11 , wherein the layer has a higher conductivity than the partition wall.
13. The light-emitting device according to claim 11 , wherein a difference between a film thickness of the layer and a film thickness of the partition wall is within ±5% of the film thickness of the partition wall.
14. The light-emitting device according to claim 11 , wherein a concentration of the halogen atom contained in the layer is 1×10 21 atoms/cm 3 or more.
15. The light-emitting device according to claim 11 , wherein a weight percent of the transition metal oxide in the layer is greater than or equal to 5% and less than or equal to 25%.
16. The light-emitting device according to claim 11 , wherein the transition metal oxide is molybdenum oxide.
17. The light-emitting device according to claim 11 , wherein the transition metal oxide is molybdenum trioxide.
18. The light-emitting device according to claim 11 , wherein the halogen atom is fluorine or chlorine.
19. The light-emitting device according to claim 11 , wherein each of a film thickness of the layer and a film thickness of the partition wall is 500 nm or more.
20. The light-emitting device according to claim 11 , wherein the light-emitting device is incorporated in one selected from the group consisting of a television set, a computer, a cellular telephone, a camera, a backlight of a liquid crystal display device, a table lamp and an indoor lighting apparatus.
21. A light-emitting device comprising:
a light-emitting element over a substrate, the light-emitting element being partitioned from an adjacent light-emitting element by a partition wall,
wherein the light-emitting element comprises:
a first electrode;
a layer formed over the first electrode;
a light-emitting layer formed over the layer; and
a second electrode formed over the light-emitting layer,
wherein the layer contains a transition metal oxide, an organic compound and a halogen atom, the organic compound being an aromatic amine compound or an aromatic hydrocarbon,
wherein the partition wall contains the transition metal oxide and the organic compound, and
wherein a thickness of the partition wall is equal to a sum of a thickness of the layer and a thickness of the first electrode.
22. The light-emitting device according to claim 21 , wherein the layer has a higher conductivity than the partition wall.
23. The light-emitting device according to claim 21 , wherein a difference between a film thickness of the layer and a film thickness of the partition wall is within ±5% of the film thickness of the partition wall.
24. The light-emitting device according to claim 21 , wherein a concentration of the halogen atom contained in the layer is 1×10 21 atoms/cm 3 or more.
25. The light-emitting device according to claim 21 , wherein a weight percent of the transition metal oxide in the layer is greater than or equal to 5% and less than or equal to 25%.
26. The light-emitting device according to claim 21 , wherein the transition metal oxide is molybdenum oxide.
27. The light-emitting device according to claim 21 , wherein the transition metal oxide is molybdenum trioxide.
28. The light-emitting device according to claim 21 , wherein the halogen atom is fluorine or chlorine.
29. The light-emitting device according to claim 21 , wherein each of a film thickness of the layer and a film thickness of the partition wall is 500 nm or more.
30. The light-emitting device according to claim 21 , wherein the light-emitting device is incorporated in one selected from the group consisting of a television set, a computer, a cellular telephone, a camera, a backlight of a liquid crystal display device, a table lamp and an indoor lighting apparatus.
31. A light-emitting device comprising:
a light-emitting element over a substrate, the light-emitting element being partitioned from an adjacent light-emitting element by a partition wall,
wherein the light-emitting element comprises:
a first electrode;
a layer formed over the first electrode;
a light-emitting layer formed over the layer; and
a second electrode formed over the light-emitting layer,
wherein the layer contains a transition metal oxide, an organic compound and a halogen atom,
wherein the partition wall contains the transition metal oxide and the organic compound, and
wherein a thickness of the partition wall is equal to a sum of a thickness of the layer and a thickness of the first electrode.
32. The light-emitting device according to claim 31 , wherein the layer has a higher conductivity than the partition wall.
33. The light-emitting device according to claim 31 , wherein a difference between a film thickness of the layer and a film thickness of the partition wall is within ±5% of the film thickness of the partition wall.
34. The light-emitting device according to claim 31 , wherein a concentration of the halogen atom contained in the layer is 1×10 21 atoms/cm 3 or more.
35. The light-emitting device according to claim 31 , wherein a weight percent of the transition metal oxide in the layer is greater than or equal to 5% and less than or equal to 25%.
36. The light-emitting device according to claim 31 , wherein the transition metal oxide is molybdenum oxide.
37. The light-emitting device according to claim 31 , wherein the transition metal oxide is molybdenum trioxide.
38. The light-emitting device according to claim 31 , wherein the halogen atom is fluorine or chlorine.
39. The light-emitting device according to claim 31 , wherein each of a film thickness of the layer and a film thickness of the partition wall is 500 nm or more.
40. The light-emitting device according to claim 31 , wherein the light-emitting device is incorporated in one selected from the group consisting of a television set, a computer, a cellular telephone, a camera, a backlight of a liquid crystal display device, a table lamp and an indoor lighting apparatus.