Capacitance modeling

1. An integrated circuit design system for modeling a capacitance (C 1 ) for a subject structure comprising a pair of long conductors surrounded by a dielectric material and supported by substrate, the surrounding dielectric material is a first dielectric with a first permittivity (∈ 1 ) and the substrate is a second dielectric with a second permittivity (∈ 2 ), the system comprising:

a memory storage device; and

a processor device connected to the memory storage device and adopted for performing a method to:

obtain a known capacitance (C 2 ) as a basis solution for a basis structure of a pair of long conductors having a same cross-section geometry as said subject structure with the same first permittivity (∈ 1 ) and a different second permittivity (∈ 2 );

determine a reflection coefficient for the subject structure and said basis structure based on the first and second permittivities (∈ 1 , ∈ 2 )

determine one of: a charge density function, or a uniform charge density approximation for said basis structure;

determine one of: a mirror capacitance for said subject structure based on said charge density function, or an averaged mirror capacitance for said subject structure based on said uniform charge density approximation; and

compute the capacitance of the subject structure based on the reflection coefficients and one of said mirror capacitance or the averaged mirror capacitance.

2. The integrated circuit design system as claimed in claim 1 , wherein a reflection coefficient k i is determined according to k i =(∈ 1 −∈ 2i )/(∈ 1 +∈ 2i ) for i=1, 2 where ∈ 21 is the substrate permittivity ∈ 2 of the subject structure; and ∈ 22 is the substrate permittivity ∈ 2 of the basis structure.

3. The integrated circuit design system as claimed in claim 2 , wherein the capacitance C 1 is computed according to: C 1 =1/(1/C 2 +(k 1 −k 2 )/C*(k 2 )) where C*(k 2 ) is the computed mirror capacitance.

4. The integrated circuit design system as claimed in claim 3 , wherein the charge density function is determined according to σ(X,k 2 ), said mirror capacitance computed according to: C*(k 2 )=C*(X 1 ,X 2 ,k 2 ).

5. The integrated circuit design system as claimed in claim 3 , wherein the averaged minor capacitance is computed according to C*(k 2 )=C* avg (k 2 ) based on the uniform charge density approximation.

6. The integrated circuit design system as claimed in claim 1 , wherein the pair of long conductors each have a width and metal layer thickness of the same order.

7. The integrated circuit design system as claimed in claim 1 , wherein the pair of long conductors are spaced apart by a distance of the same order as the width and thickness of the conductors.

8. The integrated circuit design system as claimed in claim 1 , wherein the cross-section of each of the long conductors is constant along the length.

9. The integrated circuit design system as claimed in claim 1 , wherein each of the long conductors is formed of a single conductor or more than one parallel conductor.

10. A computer program product stored on a non-transitory computer readable storage medium readable by a processing circuit and storing instructions run by the processing circuit for performing a method, for modeling a capacitance (C 1 ) for a subject structure comprising a pair of long conductors surrounded by a dielectric material and supported by a substrate, the surrounding dielectric material is a first dielectric with a first permittivity (∈ 1 ) and the substrate is a second dielectric with a second permittivity (∈ 2 ), said modeling method comprising: obtaining known capacitance (C 2 ) computed as a basis solution for a basis structure having a same cross-section geometry as said subject structure with the same first permittivity (∈ 1 ) and a different second permittivity (∈ 2 );

determining a reflection coefficient for the subject structure and said basis structure based on the first and second permittivities (∈ 1 , ∈ 2 );

determining one of: a charge density function, or a uniform charge density approximation for said basis structure;

computing one of: a mirror capacitance for said subject structure based on said charge density function, or an averaged mirror capacitance for said subject structure based on said uniform charge density approximation; and

computing the capacitance of the subject structure based on the reflection coefficients and one of: said computed mirror capacitance or the averaged mirror capacitance.

11. The computer program product as claimed in claim 10 , wherein a reflection coefficient k i is determined according to k i =(∈ 1 −∈ 2i )/(∈ 1 +∈ 2i ) for i=1, 2 where ∈ 21 is the substrate permittivity ∈ 2 of the subject structure; and ∈ 22 is the substrate permittivity ∈ 2 of the basis structure.

12. The computer program product as claimed in claim 11 , wherein the capacitance C 1 is computed according to: C 1 =1/(1/C 2 +(k 1 −k 2 )/C*(k 2 )) where C*(k 2 ) is the computed mirror capacitance.

13. The computer program product as claimed in claim 12 , wherein the charge density function is determined according to σ(X,k 2 ), said mirror capacitance computed according to: C*(k 2 )=C*(X 1 ,X 2 ,k 2 ).

14. The computer program product as claimed in claim 12 , wherein the averaged minor capacitance is computed according to C*(k 2 )=C* avg (k 2 ) based on the uniform charge density approximation.

15. The computer program product as claimed in claim 10 , wherein the pair of long conductors each have a width and metal layer thickness of the same order.

16. The computer program product as claimed in claim 10 , wherein the pair of long conductors are spaced apart by a distance of the same order as the width and thickness of the conductors.

17. The computer program product as claimed in claim 10 , wherein the cross-section of each of the long conductors is constant along the length.

18. The computer program product as claimed in claim 10 , wherein each of the long conductors is formed of a single conductor or more than one parallel conductor.