Organic light emitting diode display device and method of fabricating the same

1. A joining method for an organic light emitting diode (OLED) display device, the method comprising:

providing a support and a flexible substrate;

forming a first metal layer on one side of the support and a second metal layer on a first side of the flexible substrate;

performing a cleaning process on the first metal layer and the second metal layer;

forming a first radical layer on the first metal layer and a second radical layer on the second metal layer by a plasma process;

joining the first radical layer to the second radical layer so that the flexible substrate, second metal layer, second radical layer, first radical layer, first metal layer and support are stacked in this order;

forming an OLED display device on a second side of the flexible substrate, wherein the second side is opposing the first side; and

detaching the first side of the flexible substrate from the second metal layer.

2. The method of claim 1 , wherein the cleaning process comprises first to third cleaning processes, wherein the first and third cleaning processes are to dry the metal layers after immersing them in deionized water or organic cleaning liquid, and wherein the second cleaning process is performed by D-sonic and rinse methods using deionized water.

3. The method of claim 1 , wherein the first metal layer and the second metal layer are formed by one of the following: an ion exchange method, an adsorption method, an ion injection method, a coating method, a sputtering method and a deposition method.

4. The method of claim 1 , wherein the first metal layer and the second metal layer are formed to a thickness of about 1000 Å to about 10000 Å.

5. The method of claim 1 , wherein the first metal layer and the second metal layer comprise one of iron, nickel, tin, zinc, chrome, cobalt, silicon, magnesium, titanium, zirconium, aluminum, silver, copper and an alloy thereof.

6. The method of claim 1 , wherein the first radical layer and the second radical layer are joined to each other by covalent bonding.

7. The method of claim 1 , wherein the joining process comprises first and second joining processes, wherein the first joining process is performed at room temperature, and wherein the second joining process is performed by pressing and annealing.

8. A method of fabricating an organic light emitting diode (OLED) display device, comprising:

providing a support and a flexible substrate, wherein the flexible substrate comprises first and second surfaces opposing each other;

forming a first metal layer on one side of the support and a second metal layer on the first surface of the flexible substrate;

performing a cleaning process on the first metal layer and the second metal layer;

forming a first radical layer on the first metal layer and a second radical layer on the second metal layer;

joining the first radical layer to the second radical layer so that the flexible substrate, second metal layer, second radical layer, first radical layer, first metal layer and support are stacked in this order;

forming an OLED display device on the second surface of the flexible substrate, wherein the OLED display device comprises a first electrode, an organic layer having an emission layer, and a second electrode; and

detaching the first surface of the flexible substrate from the second metal layer.

9. The method of claim 8 , wherein the cleaning process comprises first to third cleaning processes, wherein the first and third cleaning processes are to dry the metal layers after immersing them in deionized water or organic cleaning liquid, and wherein the second cleaning process is performed by D-sonic and rinse methods using deionized water.

10. The method of claim 8 , wherein the first metal layer and the second metal layer are formed by one of the following: an ion exchange method, an adsorption method, an ion injection method, a coating method, a sputtering method and a deposition method.

11. The method of claim 8 , wherein the first metal layer and the second metal layer are formed to a thickness of about 1000 Å to about 10000 Å.

12. The method of claim 8 , wherein the first metal layer and the second metal layer comprise one of iron, nickel, tin, zinc, chrome, cobalt, silicon, magnesium, titanium, zirconium, aluminum, silver, copper and an alloy thereof.

13. The method of claim 8 , wherein the first radical layer and the second radical layer are formed by a plasma process.

14. The method of claim 8 , wherein the joining process comprises first and second joining processes, wherein the first joining process is performed at room temperature, and wherein the second joining process is performed by pressing and annealing.

15. A joining method for a flat panel display device which comprises a flexible substrate, the method comprising:

providing a support and the flexible substrate, wherein the flexible substrate comprises first and second surfaces opposing each other;

forming a first metal layer on one side of the support and a second metal layer on the first surface of the flexible substrate;

joining the first metal layer to the second metal layer;

forming a flat panel display device on the second surface of the flexible substrate; and

detaching the first surface of the flexible substrate from the second metal layer so that the flexible substrate is incorporated into the flat panel display device.

16. The joining method for a flat panel display device of claim 15 , further comprising:

forming a first radical layer on the first metal layer and a second radical layer on the second metal layer, wherein the first radical layer is joined to the second radical layer so that the flexible substrate, second metal layer, second radical layer, first radical layer, first metal layer and support are stacked in this order.