Wide aperture image sensor pixel
View Patent ↗An image sensor includes a unit cell of four pixels. The unit cell includes four photosensitive regions that collect charge in response to light; four transfer transistors that respectively pass the charge from each of the four photosensitive regions to one common charge-to-voltage conversion mechanism; three control wires in which a first control wire controls two of the transfer transistors and a second control wire controls one of the transfer transistors and a third control wire controls one of the transfer transistors; an amplifier connected to the common charge-to-voltage conversion mechanism that outputs an output signal in response to a signal from the charge-to-voltage conversion mechanism; and a reset transistor connected to the common charge-to-voltage conversion mechanism for resetting the charge-to-voltage conversion mechanism to a predetermined signal level.
1. An image sensor comprising:
a plurality of pixels comprising:
a unit cell of four pixels comprising:
a) four photosensitive regions that collect charge in response to light;
b) four transfer transistors that respectively pass the charge from each of the four photosensitive regions to one common charge-to-voltage conversion mechanism;
c) first, second and third control wires in which the first control wire controls two of the transfer transistors and a second control wire controls one of the transfer transistors and a third control wire controls one of the transfer transistors;
d) a transistor connected to the common charge-to-voltage conversion mechanism that outputs an output signal in response to a signal from the charge-to-voltage conversion mechanism; and
e) a reset transistor connected to the common charge-to-voltage conversion mechanism for resetting the charge-to-voltage conversion mechanism to a predetermined signal level.
2. The image sensor as in claim 1 wherein the photosensitive region is a photodiode.
3. The image sensor as in claim 2 wherein the charge-to-voltage conversion mechanism is a floating diffusion.
4. The image sensor as in claim 3 wherein the two photodiodes, which have their associated transfer transistor connected to the first control wire, are covered with the same color.
5. The image sensor as in claim 4 further comprising each pixel of the unit cell is rectangular shaped.
6. The image sensor as in claim 5 further comprising an aspect ratio which is equal to the ratio of two perfect square numbers.
7. The image sensor as in claim 4 wherein the remaining two photodiodes are covered by a pan-chromatic color.
8. The image sensor as in claim 7 further comprising an aspect ratio which is equal to the ratio of two perfect square numbers.
9. The image sensor as in claim 4 further comprising a power supply and output that are positioned on a first metal layer, and the three control wires are positioned on a second metal layer.
10. The image sensor as in claim 4 further comprising an area of each pixel that is less than 4μm 2 .
11. An image capture device comprising:
an image sensor comprising:
a plurality of pixels comprising:
a unit cell of four pixels comprising:
a) four photosensitive regions that collect charge in response to light;
b) four transfer transistors that respectively pass the charge from each of the four photosensitive regions to one common charge-to-voltage conversion mechanism;
c) first, second and third control wires in which the first control wire controls two of the transfer transistors and the second control wire controls one of the transfer transistors and the third control wire controls one of the transfer transistors;
d) a transistor connected to the common charge-to-voltage conversion mechanism that outputs an output signal in response to a signal from the charge-to-voltage conversion mechanism; and
e) a reset transistor connected to the common charge-to-voltage conversion mechanism for resetting the charge-to-voltage conversion mechanism to a predetermined signal level.
12. The image capture device as in claim 11 wherein the photosensitive region is a photodiode.
13. The image capture device as in claim 12 wherein the charge-to-voltage conversion mechanism is a floating diffusion.
14. The image capture device as in claim 13 wherein the two photodiodes, which have their associated transfer transistor connected to the first control wire, are covered with the same color.
15. The image capture device as in claim 14 further comprising each pixel of the unit cell is rectangular shaped.
16. The image capture device as in claim 15 further comprising an aspect ratio which is equal to the ratio of two perfect square numbers.
17. The image capture device as in claim 14 wherein the remaining two photodiodes are covered by a pan-chromatic color.
18. The image capture device as in claim 17 further comprising an aspect ratio which is equal to the ratio of two perfect square numbers.
19. The image capture device as in claim 14 further comprising a power supply and output that are positioned on a first metal layer, and the three control wires are positioned on a second metal layer.
20. The image capture device as in claim 14 further comprising an area of each pixel that is less than 4μm 2 .