METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE
A method of manufacturing a silicon carbide semiconductor substrate is disclosed in which the density of basal plane dislocations (BPDs) in particular is reduced in an SiC crystal substrate. Irregularities in the surface of the substrate due to this reduction also can be flattened. A method of manufacturing a silicon carbide semiconductor substrate is disclosed in which, prior to forming an epitaxial growth layer on a silicon carbide substrate with an off-axis angle of 1° to 8°, parallel line-shape irregularities, which have an irregularity cross-sectional aspect ratio equal to or greater than the tangent of the off-axis angle of the silicon carbide substrate, are formed in the substrate surface. The irregularites have a height between 0.25 μm and 5 μm.
1 . A method of manufacturing a silicon carbide semiconductor substrate, comprising:
forming parallel line-shape irregularities in a surface of a silicon carbide substrate having an off-axis angle of 1° to 8°, said irregularities having a height between 0.25 μm and 5 μm and an irregularity cross-sectional aspect ratio equal to or greater than the tangent of the off-axis angle of said silicon carbide substrate; and then forming a silicon carbide epitaxial growth layer on said silicon carbide substrate.
2 . The method of manufacturing a silicon carbide semiconductor substrate according to claim 1 , wherein annealing is performed at a temperature of 1800° C. or higher after forming the silicon carbide epitaxial growth layer.
3 . The method of manufacturing a silicon carbide semiconductor substrate according to claim 1 , wherein the linear direction of parallel line-shape irregularities formed in the substrate surface is perpendicular to a direction of inclination of the off-axis angle of the silicon carbide substrate.
4 . The method of manufacturing a silicon carbide semiconductor substrate according to claim 2 , wherein the linear direction of parallel line-shape irregularities formed in the substrate surface is perpendicular to a direction of inclination of the off-axis angle of the silicon carbide substrate.
5 . The method of manufacturing a silicon carbide semiconductor substrate according to claim 1 , wherein W−2H≦L×tan θ≦H, where θ is the off-axis angle of the silicon carbide substrate, H is the height of the irregularities, L is the width of the irregularities, and W is the repetition pitch of the irregularities.