Method of forming thin film transistor
View Patent ↗A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate and includes at least one molybdenum-niobium alloy nitride layer. The gate insulating layer is formed over the substrate to cover the gate. The semiconductor layer is disposed over the gate insulating layer above the gate. The source/drain is disposed over the semiconductor layer.
1. A method of forming a thin film transistor, comprising:
forming a gate over a substrate, wherein the gate is a single-layered molybdenum-niobium alloy nitride layer;
forming a gate insulating layer over the substrate to cover the gate;
forming a semiconductor layer over the gate insulating layer above the gate; and
forming a source/drain over the semiconductor layer, wherein the step of forming the source/drain comprises:
forming a molybdenum-niobium alloy layer over the gate insulating layer to cover the semiconductor layer;
performing a nitridation step for the molybdenum-niobium alloy layer to form a molybdenum-niobium alloy nitride layer, wherein the nitridation step is performed after forming the molybdenum-niobium alloy layer or when depositing the molybdenum-niobium alloy layer; and
patterning the molybdenum-niobium alloy nitride layer to form the source/drain.
2. A method of forming a thin film transistor, comprising:
forming a gate over a substrate, wherein the gate is a single-layered molybdenum-niobium alloy nitride layer;
forming a gate insulating layer over the substrate to cover the gate;
forming a semiconductor layer over the gate insulating layer above the gate; and
forming a source/drain over the semiconductor layer, wherein the step of forming the source/drain comprises:
forming a first molybdenum-niobium alloy layer over the gate insulating layer to cover the semiconductor layer;
forming a second molybdenum-niobium alloy layer over the first molybdenum-niobium alloy layer;
performing a nitridation step for the second molybdenum-niobium alloy layer to form a molybdenum-niobium alloy nitride layer on the first molybdenum-niobium alloy layer, wherein the nitridation step is performed after forming the second molybdenum-niobium alloy layer or when depositing the second molybdenum-niobium alloy layer; and
patterning the molybdenum-niobium alloy nitride layer and the first molybdenum-niobium alloy layer to form the source/drain.
3. A method of forming a thin film transistor, comprising:
forming a gate over a substrate, wherein the gate is a single-layered molybdenum-niobium alloy nitride layer;
forming a gate insulating layer over the substrate to cover the gate;
forming a semiconductor layer over the gate insulating layer above the gate; and
forming a source/drain over the semiconductor layer, wherein the step of forming the source/drain comprises:
forming a first molybdenum-niobium alloy layer over the gate insulating layer to cover the semiconductor layer;
performing a first nitridation step for the first molybdenum-niobium alloy layer to form a first molybdenum-niobium alloy nitride layer, wherein the first nitridation step is performed after forming the first molybdenum-niobium alloy layer or when depositing the first molybdenum-niobium alloy layer;
forming a second molybdenum-niobium alloy layer over the first molybdenum-niobium alloy nitride layer;
forming a third molybdenum-niobium alloy layer over the second molybdenum-niobium alloy layer;
performing a second nitridation step for the third molybdenum-niobium alloy layer to form a second molybdenum-niobium alloy nitride layer on the second molybdenum-niobium alloy layer, wherein the second nitridation step is performed after forming the third molybdenum-niobium alloy layer or when depositing the third molybdenum-niobium alloy layer; and
patterning the second molybdenum-niobium alloy nitride layer, the second molybdenum-niobium alloy layer and the first molybdenum-niobium alloy nitride layer to form the source/drain.