Frame shutter pixel with an isolated storage node

1. A method comprising:

receiving a photoelectrically induced signal in an array of photoreceptors on a semiconductor substrate;

controlling each photoreceptor in the array of photoreceptors to simultaneously initiate a common integration period;

at the end of each integration period, controlling each photoreceptor in the array of photoreceptors to transfer its photoelectrically induced signal to a respective storage node formed in the semiconductor substrate; and

preventing each storage node from integrating charge,

wherein each storage node is doped to a first conductivity type, and

wherein a portion of the semiconductor substrate surrounding each storage node is doped to a second conductivity type.

2. The method of claim 1 , wherein the act of preventing each storage node from integrating charge comprises shielding each storage node with an overlying light shield.

3. The method of claim 1 , wherein the act of preventing each storage node from integrating charge comprises shielding at least the semiconductor substrate surrounding each storage node with an overlying light shield.

4. The method of claim 3 , further comprising enabling a first reset operation which resets a value of each storage node, and enabling a second reset operation, which resets a value of each photoreceptor.

5. The method of claim 4 , wherein said first and second reset operations each comprises activating a gate within the semiconductor substrate surrounding each storage node.

6. The method of claim 5 , wherein each photoelectrically induced signal is a signal indicative of charge produced by a respective photoreceptor during said integration period.

7. The method of claim 4 , wherein each of the plurality of photoreceptors in the array comprise a semiconductor well.

8. The method of claim 1 , further comprising resetting each storage node with a reset transistor provided within the semiconductor substrate surrounding each storage node.

9. The method of claim 8 , further comprising removing charge from each photoreceptor with an anti blooming gate located within each semiconductor well.

10. The method of claim 1 , further comprising transferring charge from each photoreceptor to each storage node with a transfer gate provided within the semiconductor substrate surrounding each storage node.

11. The method of claim 1 , further comprising isolating each storage node with a bridge diffusion node located within the semiconductor substrate surrounding each storage node.