Method of manufacturing semiconductor device, and semiconductor device
View Patent ↗A method for manufacturing a semiconductor device is provided that can reduce warping of manufactured products after the formation of a final protective film. The method includes, in a semiconductor device having a semiconductor substrate provided with wiring and a final protective film formed on the wiring, forming a first protective film on the wiring, forming a second protective film having tensile stress on the first protective film, and removing the first protective film and the second protective film from contact regions of the wiring.
1. A method of manufacturing a semiconductor device having a semiconductor substrate provided with wiring thereon and a final protective film comprising a first protective film and a second protective film formed in this order on the wiring, the method comprising:
forming the wiring on a semiconductor substrate;
forming the first protective film on the wiring;
forming the second protective film under tensile stress on the first protective film; and
removing the first protective film and the second protective film from contact regions of the wiring,
wherein the first protective film and the second protective film are formed contiguously across the substrate.
2. The method of manufacturing a semiconductor device of claim 1 , wherein an internal stress of the second protective film is higher than an internal stress of the first protective film.
3. The method of manufacturing a semiconductor device of claim 1 , wherein the tensile stress of the second protective film is from 400 MPa to 500 Mpa.
4. The method of manufacturing a semiconductor device of claim 2 , wherein the tensile stress of the second protective film is from 400 MPa to 500 Mpa.
5. The method of manufacturing a semiconductor device of claim 1 , wherein an internal stress of the first protective film is from −300 MPa to 50 Mpa.
6. The method of manufacturing a semiconductor device of claim 2 , wherein the internal stress of the first protective film is from −300 MPa to 50 Mpa.
7. The method of manufacturing a semiconductor device of claim 3 , wherein an internal stress of the first protective film is from −300 MPa to 50 Mpa.
8. The method of manufacturing a semiconductor device of claim 4 , wherein the internal stress of the first protective film is from −300 MPa to 50 Mpa.
9. The method of manufacturing a semiconductor device of claim 1 , wherein the first protective film and the second protective film are formed by parallel plate plasma CVD.
10. The method of manufacturing a semiconductor device of claim 1 , wherein the final protective film is a passivation film.
11. A method of manufacturing a semiconductor device having a semiconductor substrate provided with wiring thereon and a final protective film comprising a first protective film and a second protective film formed in this order on the wiring, the method comprising:
forming the wiring on a semiconductor substrate;
forming the first protective film on the wiring;
forming the second protective film under tensile stress on the first protective film; and
removing the first protective film and the second protective film from contact regions of the wiring,
wherein the second protective film is formed contiguously across the substrate.
12. The method of manufacturing a semiconductor device of claim 11 , wherein an internal stress of the second protective film is higher than an internal stress of the first protective film.
13. The method of manufacturing a semiconductor device of claim 11 , wherein the tensile stress of the second protective film is from 400 MPa to 500 Mpa.
14. The method of manufacturing a semiconductor device of claim 12 , wherein the tensile stress of the second protective film is from 400 MPa to 500 Mpa.
15. The method of manufacturing a semiconductor device of claim 11 , wherein an internal stress of the first protective film is from −300 MPa to 50 Mpa.
16. The method of manufacturing a semiconductor device of claim 12 , wherein the internal stress of the first protective film is from −300 MPa to 50 Mpa.
17. The method of manufacturing a semiconductor device of claim 13 , wherein an internal stress of the first protective film is from −300 MPa to 50 Mpa.
18. The method of manufacturing a semiconductor device of claim 14 , wherein the internal stress of the first protective film is from −300 MPa to 50 Mpa.
19. The method of manufacturing a semiconductor device of claim 11 , wherein the first protective film and the second protective film are formed by parallel plate plasma CVD.
20. The method of manufacturing a semiconductor device of claim 11 , wherein the final protective film is a passivation film.